絲?。?a target="_blank" title="Marking" href="/d3nk80z/marking.html">D3NK80Z；Package：IPAK；N-CHANNEL 800V - 3.8W - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH??Power MOSFET

Description The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

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絲?。?a target="_blank" title="Marking" href="/d3nk80z/marking.html">D3NK80Z；Package：IPAK；N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH? Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages

Features ? Extremely high dv/dt capability ? 100 avalanche tested ? Gate charge minimized ? Zener-protected Applications ? Switching applications Description These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroel

文件：1.36185 Mbytes 頁數(shù)：29 Pages

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N-channel 800V - 3.8廓 - 2.5A - TO-220/TO-220FP/DPAK/IPAK Zener-protected SuperMESH??Power MOSFET

文件：537.25 Kbytes 頁數(shù)：18 Pages

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N-channel 800 V, 3.8 廓, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH??Power MOSFET

文件：888.8 Kbytes 頁數(shù)：18 Pages

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N溝道800 V、3.8 Ohm典型值、2.5 A SuperMESH功率MOSFET，IPAK封裝

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt cap ? 100% avalanche tested \n? Gate charge minimized \n? Very low intrinsic capacitance \n? Zener-protected;

ST

意法半導(dǎo)體

N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH? Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages

Features ? Extremely high dv/dt capability ? 100 avalanche tested ? Gate charge minimized ? Zener-protected Applications ? Switching applications Description These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH? technology by STMicroel

文件：1.36185 Mbytes 頁數(shù)：29 Pages

STMICROELECTRONICS

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