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          首頁 >PTF191601F>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PTF191601F

          Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

          Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and re

          文件:206.33 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          PTF191601F

          Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

          Infineon

          英飛凌

          PTF191601

          LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

          Description The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average o

          文件:61.2 Kbytes 頁數(shù):4 Pages

          INFINEON

          英飛凌

          PTF191601E

          Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

          Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and re

          文件:206.33 Kbytes 頁數(shù):10 Pages

          INFINEON

          英飛凌

          PTF191601E

          LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

          Description The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average o

          文件:61.2 Kbytes 頁數(shù):4 Pages

          INFINEON

          英飛凌

          詳細參數(shù)

          • 型號:

            PTF191601F

          • 制造商:

            INFINEON

          • 制造商全稱:

            Infineon Technologies AG

          • 功能描述:

            Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

          供應(yīng)商型號品牌批號封裝庫存備注價格
          INFINEON
          23+
          8000
          只做原裝現(xiàn)貨
          詢價
          INFINEON
          23+
          7000
          詢價
          INFINEON/英飛凌
          23+
          Description
          11200
          原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
          詢價
          ERICSSON
          24+
          800
          詢價
          MOT
          23+
          高頻管
          155
          專營高頻管模塊,全新原裝!
          詢價
          REICSSON
          24+
          500
          現(xiàn)貨供應(yīng)
          詢價
          REICSSON
          23+
          TO-59
          8510
          原裝正品代理渠道價格優(yōu)勢
          詢價
          INFINEON
          22+
          PTF20024
          8000
          終端可免費供樣,支持BOM配單
          詢價
          INFINEON
          22+
          高頻管
          350
          十七年VIP會員,誠信經(jīng)營,一手貨源,原裝正品可零售!
          詢價
          25+
          2789
          全新原裝自家現(xiàn)貨!價格優(yōu)勢!
          詢價
          更多PTF191601F供應(yīng)商 更新時間2026-1-21 15:01:00
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