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    首頁 >PTF191601>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    PTF191601

    LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

    Description The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average o

    文件:61.2 Kbytes 頁數(shù):4 Pages

    INFINEON

    英飛凌

    PTF191601E

    Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

    Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and re

    文件:206.33 Kbytes 頁數(shù):10 Pages

    INFINEON

    英飛凌

    PTF191601E

    LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

    Description The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average o

    文件:61.2 Kbytes 頁數(shù):4 Pages

    INFINEON

    英飛凌

    PTF191601F

    Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

    Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and re

    文件:206.33 Kbytes 頁數(shù):10 Pages

    INFINEON

    英飛凌

    PTF191601E

    LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

    Infineon

    英飛凌

    PTF191601F

    Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

    Infineon

    英飛凌

    詳細參數(shù)

    • 型號:

      PTF191601

    • 制造商:

      INFINEON

    • 制造商全稱:

      Infineon Technologies AG

    • 功能描述:

      LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

    供應(yīng)商型號品牌批號封裝庫存備注價格
    INFINEON
    23+
    高頻管
    155
    專營高頻管模塊,全新原裝!
    詢價
    INFINEON
    24+
    NA
    700
    詢價
    ERICSSON/愛立信
    24+
    500
    現(xiàn)貨供應(yīng)
    詢價
    ERICSSON/愛立信
    23+
    TO-59
    8510
    原裝正品代理渠道價格優(yōu)勢
    詢價
    INFINEON
    22+
    高頻管
    350
    十七年VIP會員,誠信經(jīng)營,一手貨源,原裝正品可零售!
    詢價
    INFINEON
    23+
    CAN
    8000
    只做原裝現(xiàn)貨
    詢價
    INFINEON
    23+
    CAN
    7000
    詢價
    INFINEON
    05/06+
    369
    全新原裝100真實現(xiàn)貨供應(yīng)
    詢價
    INFINEON
    24+
    5989
    公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
    詢價
    INFINEON
    24+
    NA
    5000
    只做原裝公司現(xiàn)貨
    詢價
    更多PTF191601供應(yīng)商 更新時間2026-1-22 10:51:00

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