LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average output

文件：293.73 Kbytes 頁(yè)數(shù)：6 Pages

INFINEON

英飛凌

LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz

Description\nThe PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. ? Broadband internal matching\n? Typical CW performance\n? Integrated ESD protection: Human Body Model, Class 1 (minimum)\n? Low HCI drift\n? Capable of handling 10:1 VSWR @ 28V, 60 W (CW) output power;

Infineon

英飛凌

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average output

文件：293.73 Kbytes 頁(yè)數(shù)：6 Pages

INFINEON

英飛凌

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average output

文件：293.73 Kbytes 頁(yè)數(shù)：6 Pages

INFINEON

英飛凌