LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - A

文件：158.52 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

LDMOSRF Power Field Effect Transistor 45 W, 869–960 MHz

Description\nThe PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA? applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. ? Broadband internal matching\n? Typical EDGE performance\n- Average output power = 22.5 W\n- Gain = 18 dB\n- Efficiency = 40%\n? Typical CW performance\n- Output power at P–1dB = 60 W\n- Gain = 17 dB\n- Efficiency = 60%\n? Integrated ESD protection: Human Body Model, Class 1 (minimum)\n? Ex;

Infineon

英飛凌

LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - A

文件：158.52 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

OMRON/歐姆龍

上傳：深圳市英創(chuàng)達(dá)電子半導(dǎo)體有限公司

EUT-6

TI/德州儀器

上傳：深圳市坤融電子科技有限公司