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    首頁 >PHB>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    PHB11N06LT

    N-channel TrenchMOS transistor Logic level FET

    GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa

    文件:114.92 Kbytes 頁數(shù):12 Pages

    PHI

    PHI

    PHI

    PHB11N06LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:344.43 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB11N50E

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:344.77 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB11N50E

    PowerMOS transistors Avalanche energy rated

    VDSS = 500 V ID = 10.4 A RDS(ON) ≤ 0.6 ? GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general pur

    文件:41.62 Kbytes 頁數(shù):7 Pages

    PHI

    PHI

    PHI

    PHB11N50E

    PowerMOS transistors Avalanche energy rated

    VDSS = 500 V ID = 10.4 A RDS(ON) ≤ 0.6 ? GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general pur

    文件:102.93 Kbytes 頁數(shù):9 Pages

    PHI

    PHI

    PHI

    PHB125N06LT

    TrenchMOS transistor Logic level FET

    GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP125N06LT is su

    文件:70.17 Kbytes 頁數(shù):8 Pages

    PHI

    PHI

    PHI

    PHB125N06LT

    TrenchMOS transistor Logic level FET

    GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP125N06LT is su

    文件:71.75 Kbytes 頁數(shù):9 Pages

    PHI

    PHI

    PHI

    PHB125N06LT

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:344.25 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB125N06T

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:344.74 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    PHB125N06T

    TrenchMOS transistor Standard level FET

    GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

    文件:67.96 Kbytes 頁數(shù):8 Pages

    PHI

    PHI

    PHI

    技術(shù)參數(shù)

    • Package name:

      D2PAK

    • Product status:

      Production

    • Channel type:

      N

    • Nr of transistors:

      1

    • VDS [max] (V):

      75

    • RDSon [max] @ VGS = 10 V (mΩ):

      9

    • Tj [max] (°C):

      175

    • ID [max] (A):

      75

    • QGD [typ] (nC):

      48.2

    • QG(tot) [typ] @ VGS = 10 V (nC):

      113.1

    • Ptot [max] (W):

      230

    • Qr [typ] (nC):

      270

    • VGSth [typ] (V):

      3

    • Automotive qualified:

      N

    • Ciss [typ] (pF):

      4860

    • Coss [typ] (pF):

      840

    • Release date:

      2011-01-05

    供應(yīng)商型號品牌批號封裝庫存備注價格
    PHI
    25+
    TO-263
    157
    百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
    詢價
    PHI
    01+
    TO220
    389
    原裝現(xiàn)貨海量庫存歡迎咨詢
    詢價
    PHI
    22+
    TO-263
    5000
    全新原裝現(xiàn)貨!自家?guī)齑?
    詢價
    恩XP
    2016+
    TO-263
    3000
    只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
    詢價
    NEXPERIA/安世
    SOT404
    23+
    48000
    授權(quán)代理/原廠FAE技術(shù)支持
    詢價
    PHI
    24+
    TO-263
    25000
    一級專營品牌全新原裝熱賣
    詢價
    乾坤
    24+
    2520
    10952
    全新原裝數(shù)量均有多電話咨詢
    詢價
    VBSEMI/臺灣微碧
    24+
    D2-PAK
    60000
    詢價
    恩XP
    23+
    TO-263
    11846
    一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
    詢價
    PHI
    25+
    TO252-2.5
    18000
    原廠直接發(fā)貨進(jìn)口原裝
    詢價
    更多PHB供應(yīng)商 更新時間2026-1-22 8:21:00

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