8W 12.5V 500MHz LDMOS in PowerFLAT plastic package

The PD55008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies up to 1GHz.\nPD55008L-E boasts the excellent gain, linearit In compliance with 2002/95/EC european directive\nSupplied in tape and reel of 3K units\nExcellent thermal stability\nP\nOUT = 8W with 17dB gain @ 500MHz / 12.5V\nCommon source configuration\nNew leadless plastic package\nIntegrated ESD protection;

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RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies up to 1GHz. PD55008L-E boasts the excellent

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Package：8-PowerVDFN；包裝：托盤 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：TRANSISTOR RF 5X5 POWERFLAT

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RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

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RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent g

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