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          首頁(yè) >NES>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          NESG2031M16-T3

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP.

          文件:119.15 Kbytes 頁(yè)數(shù):12 Pages

          NEC

          瑞薩

          NESG2031M16-T3

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @

          文件:336.67 Kbytes 頁(yè)數(shù):14 Pages

          RENESAS

          瑞薩

          NESG2031M16-T3-A

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @

          文件:336.67 Kbytes 頁(yè)數(shù):14 Pages

          RENESAS

          瑞薩

          NESG2031M16-T3-A

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP.

          文件:119.15 Kbytes 頁(yè)數(shù):12 Pages

          NEC

          瑞薩

          NESG204619

          NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

          FEATURES ? IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ ? HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS: VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V ? 3-PIN SUPER MINIMOLD (19) PACKAGE

          文件:116.48 Kbytes 頁(yè)數(shù):3 Pages

          NEC

          瑞薩

          NESG204619

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES ? The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz ? High breakdown voltage technology

          文件:302.01 Kbytes 頁(yè)數(shù):10 Pages

          RENESAS

          瑞薩

          NESG204619-A

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES ? The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz ? High breakdown voltage technology

          文件:302.01 Kbytes 頁(yè)數(shù):10 Pages

          RENESAS

          瑞薩

          NESG204619-A

          NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

          FEATURES ? IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ ? HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS: VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V ? 3-PIN SUPER MINIMOLD (19) PACKAGE

          文件:116.48 Kbytes 頁(yè)數(shù):3 Pages

          NEC

          瑞薩

          NESG204619-T1

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES ? The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz ? High breakdown voltage technology

          文件:302.01 Kbytes 頁(yè)數(shù):10 Pages

          RENESAS

          瑞薩

          NESG204619-T1-A

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES ? The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz ? High breakdown voltage technology

          文件:302.01 Kbytes 頁(yè)數(shù):10 Pages

          RENESAS

          瑞薩

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          NEC
          24+
          244
          現(xiàn)貨供應(yīng)
          詢(xún)價(jià)
          NEC
          23+
          TO-59
          8510
          原裝正品代理渠道價(jià)格優(yōu)勢(shì)
          詢(xún)價(jià)
          NEC
          1923+
          原廠(chǎng)封裝
          8600
          萊克訊原廠(chǎng)貨源每一片都來(lái)自原廠(chǎng)原裝現(xiàn)貨薄利多
          詢(xún)價(jià)
          NEC
          23+
          27000
          原廠(chǎng)授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
          詢(xún)價(jià)
          Lumberg
          2022+
          原廠(chǎng)原包裝
          6800
          全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
          詢(xún)價(jià)
          Mean
          1931+
          N/A
          567
          加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
          詢(xún)價(jià)
          WEANWE
          25+
          DC-DC
          41
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
          詢(xún)價(jià)
          MW/臺(tái)灣明緯
          23+
          DC-DC
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢(xún)價(jià)
          MEAN WELL
          23+
          DC-DC
          41
          全新原裝正品現(xiàn)貨,支持訂貨
          詢(xún)價(jià)
          WEAN WE
          24+
          DC-DC
          80000
          只做自己庫(kù)存 全新原裝進(jìn)口正品假一賠百 可開(kāi)13%增
          詢(xún)價(jià)
          更多NES供應(yīng)商 更新時(shí)間2026-1-21 8:31:00
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