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          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          NESG2101M16-T3-A
          NPN SILICON GERMANIUM RF TRANSISTOR
          
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (125 mW)
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

FEATURES
? The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain
amplification
PO (1 dB) = 21 dBm TYP. @ VCE = 3.6
          文件：352.04 Kbytes 頁數(shù)：15 Pages
          RENESAS
          瑞薩
          

          NESG210719
          NPN SiGe RF Transistor for Low Noise, High-Gain
          
FEATURES
? The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification
? High breakdown voltage technology for SiGe Tr.
? 3-pin ultra super minimold (19, 1608 PKG)
          文件：124.41 Kbytes 頁數(shù)：10 Pages
          RENESAS
          瑞薩
          

          NESG210719
          NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
          
FEATURES
? IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION
   APPLICATIONS
? HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR
   SiGe TRANSISTOR
? 3-PIN SUPER MINIMOLD (19) PACKAGE
          文件：114.56 Kbytes 頁數(shù)：3 Pages
          NEC
          瑞薩
          

          NESG210719-A
          NPN SiGe RF Transistor for Low Noise, High-Gain
          
FEATURES
? The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification
? High breakdown voltage technology for SiGe Tr.
? 3-pin ultra super minimold (19, 1608 PKG)
          文件：124.41 Kbytes 頁數(shù)：10 Pages
          RENESAS
          瑞薩
          

          NESG210719-T1
          NPN SiGe RF Transistor for Low Noise, High-Gain
          
FEATURES
? The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification
? High breakdown voltage technology for SiGe Tr.
? 3-pin ultra super minimold (19, 1608 PKG)
          文件：124.41 Kbytes 頁數(shù)：10 Pages
          RENESAS
          瑞薩
          

          NESG210719-T1
          NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
          
FEATURES
? IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION
   APPLICATIONS
? HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR
   SiGe TRANSISTOR
? 3-PIN SUPER MINIMOLD (19) PACKAGE
          文件：114.56 Kbytes 頁數(shù)：3 Pages
          NEC
          瑞薩
          

          NESG210719-T1-A
          NPN SiGe RF Transistor for Low Noise, High-Gain
          
FEATURES
? The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification
? High breakdown voltage technology for SiGe Tr.
? 3-pin ultra super minimold (19, 1608 PKG)
          文件：124.41 Kbytes 頁數(shù)：10 Pages
          RENESAS
          瑞薩
          

          NESG2107M33
          NPN SILICON GERMANIUM RF TRANSISTOR
          
NPN SiGe RF TRANSISTOR FOR
HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION
3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG)

FEATURES
? The device is an ideal choice for OSC, low noise, high-gain amplification
? SiGe technology adopted
? 3-pin super lead-less minimold (M33, 0804 PKG) packa
          文件：244.19 Kbytes 頁數(shù)：11 Pages
          RENESAS
          瑞薩
          

          NESG2107M33
          NPN SILICON  SiGe RF TWIN TRANSISTOR
          
NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG)

FEATURES
? 2 different built-in transistors (2SC5435, NESG2107M33)
Q1: High gain transistor
fT = 12.0 GHz TYP., ?S21e?2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
Q2: Built-in l
          文件：213.31 Kbytes 頁數(shù)：8 Pages
          RENESAS
          瑞薩
          

          NESG2107M33
          NPN SILICON  SiGe RF TWIN TRANSISTOR
          
NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG)

FEATURES
? 2 different built-in transistors (2SC5436, NESG2107M33)
Q1: High gain transistor
fT = 12 GHz TYP., ?S21e?2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
Q2: Built-in lo
          文件：213.31 Kbytes 頁數(shù)：8 Pages
          RENESAS
          瑞薩
          

          
            
          
		
          
            
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          NEC
          		

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          WEAN WE
          		

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          DC-DC
          		

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