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          NESG204619-T1-A
          NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
          
FEATURES
? IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
   NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ
? HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS:
   VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V
? 3-PIN SUPER MINIMOLD (19) PACKAGE
          文件：116.48 Kbytes 頁數(shù)：3 Pages
          NEC
          瑞薩
          

          NESG2046M33
          NPN SILICON GERMANIUM RF TRANSISTOR
          
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG)

FEATURES
? The device is an ideal choice for low noise, high-gain amplification
NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
? High breakdown voltage techno
          文件：240.54 Kbytes 頁數(shù)：10 Pages
          RENESAS
          瑞薩
          

          NESG2046M33
          NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
          
FEATURES
? IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
   NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
? HIGH BREAKDOWN VOLTAGE TECHNOLOGY
   FOR SIGE TRANSISTORS :
   VCEO (absolute maximum ratings) = 5.0 V
? 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKA
          文件：118.31 Kbytes 頁數(shù)：3 Pages
          NEC
          瑞薩
          

          NESG2046M33
          NPN SILICON  SiGe RF TWIN TRANSISTOR
          
NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)

FEATURES
? 2 different built-in transistors (NESG2046M33, 2SC5800)
Q1: High gain SiGe transistor
fT = 18 GHz TYP., ?S21e?2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz
Q2: Low 
          文件：274.09 Kbytes 頁數(shù)：8 Pages
          RENESAS
          瑞薩
          

          NESG2046M33-A
          NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
          
FEATURES
? IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
   NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
? HIGH BREAKDOWN VOLTAGE TECHNOLOGY
   FOR SIGE TRANSISTORS :
   VCEO (absolute maximum ratings) = 5.0 V
? 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKA
          文件：118.31 Kbytes 頁數(shù)：3 Pages
          NEC
          瑞薩
          

          NESG2046M33-A
          NPN SILICON GERMANIUM RF TRANSISTOR
          
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG)

FEATURES
? The device is an ideal choice for low noise, high-gain amplification
NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
? High breakdown voltage techno
          文件：240.54 Kbytes 頁數(shù)：10 Pages
          RENESAS
          瑞薩
          

          NESG2046M33-T3
          NPN SILICON GERMANIUM RF TRANSISTOR
          
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG)

FEATURES
? The device is an ideal choice for low noise, high-gain amplification
NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
? High breakdown voltage techno
          文件：240.54 Kbytes 頁數(shù)：10 Pages
          RENESAS
          瑞薩
          

          NESG2046M33-T3-A
          NPN SILICON GERMANIUM RF TRANSISTOR
          
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG)

FEATURES
? The device is an ideal choice for low noise, high-gain amplification
NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
? High breakdown voltage techno
          文件：240.54 Kbytes 頁數(shù)：10 Pages
          RENESAS
          瑞薩
          

          NESG2046M33-T3-A
          NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
          
FEATURES
? IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
   NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
? HIGH BREAKDOWN VOLTAGE TECHNOLOGY
   FOR SIGE TRANSISTORS :
   VCEO (absolute maximum ratings) = 5.0 V
? 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKA
          文件：118.31 Kbytes 頁數(shù)：3 Pages
          NEC
          瑞薩
          

          NESG2101M05
          NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
          
DESCRIPTION
NECs NESG2101M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators
NECslow profile, flat lead style M05 Package provides high frequency p
          文件：172.22 Kbytes 頁數(shù)：14 Pages
          NEC
          瑞薩
          

          
            
          
		
          
            
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