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          首頁 >NES>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NESG2021M05-T1-A

          NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

          FEATURES ? This device is an ideal choice for low noise, high-gain at low current amplifications. ? NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ? NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz ? Maximum stable power gain: MSG = 22.5 dB T

          文件:159.35 Kbytes 頁數(shù):14 Pages

          RENESAS

          瑞薩

          NESG2021M16

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga

          文件:337.32 Kbytes 頁數(shù):14 Pages

          RENESAS

          瑞薩

          NESG2021M16

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP.,

          文件:120.23 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          NESG2021M16-A

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP.,

          文件:120.23 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          NESG2021M16-A

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga

          文件:337.32 Kbytes 頁數(shù):14 Pages

          RENESAS

          瑞薩

          NESG2021M16-T3

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga

          文件:337.32 Kbytes 頁數(shù):14 Pages

          RENESAS

          瑞薩

          NESG2021M16-T3

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP.,

          文件:120.23 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          NESG2021M16-T3-A

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga

          文件:337.32 Kbytes 頁數(shù):14 Pages

          RENESAS

          瑞薩

          NESG2021M16-T3-A

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

          NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP.,

          文件:120.23 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          NESG2030M04

          NONLINEAR MODEL

          DESCRIPTION The NESG2030M04 is fabricated using NECs state-of-the-art SiGe, wafer process. With a typical transition frequency of 60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides a device with a usable current range of 250 μA

          文件:13.92 Kbytes 頁數(shù):1 Pages

          NEC

          瑞薩

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          NEC
          24+
          244
          現(xiàn)貨供應(yīng)
          詢價(jià)
          NEC
          23+
          TO-59
          8510
          原裝正品代理渠道價(jià)格優(yōu)勢(shì)
          詢價(jià)
          NEC
          1923+
          原廠封裝
          8600
          萊克訊原廠貨源每一片都來自原廠原裝現(xiàn)貨薄利多
          詢價(jià)
          NEC
          23+
          27000
          原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
          詢價(jià)
          Lumberg
          2022+
          原廠原包裝
          6800
          全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
          詢價(jià)
          Mean
          1931+
          N/A
          567
          加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物
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          WEANWE
          25+
          DC-DC
          41
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價(jià)
          MW/臺(tái)灣明緯
          23+
          DC-DC
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          MEAN WELL
          23+
          DC-DC
          41
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          WEAN WE
          24+
          DC-DC
          80000
          只做自己庫存 全新原裝進(jìn)口正品假一賠百 可開13%增
          詢價(jià)
          更多NES供應(yīng)商 更新時(shí)間2026-1-20 16:53:00
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