| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) FEATURES ? The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification ? PO (1 dB) = 21 dBm TYP. @ V 文件：172.81 Kbytes 頁數(shù)：15 Pages | RENESAS 瑞薩 | RENESAS | ||
NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) FEATURES ? The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification ? PO (1 dB) = 21 dBm TYP. @ V 文件：172.81 Kbytes 頁數(shù)：15 Pages | RENESAS 瑞薩 | RENESAS | ||
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR DESCRIPTION NECs NESG2101M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NECslow profile, flat lead style M05 Package provides high frequency p 文件：172.22 Kbytes 頁數(shù)：14 Pages | NEC 瑞薩 | NEC | ||
NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) FEATURES ? The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification ? PO (1 dB) = 21 dBm TYP. @ V 文件：172.81 Kbytes 頁數(shù)：15 Pages | RENESAS 瑞薩 | RENESAS | ||
NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) FEATURES ? The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification ? PO (1 dB) = 21 dBm TYP. @ V 文件：172.81 Kbytes 頁數(shù)：15 Pages | RENESAS 瑞薩 | RENESAS | ||
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 文件：83.74 Kbytes 頁數(shù)：2 Pages | NEC 瑞薩 | NEC | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 文件：352.04 Kbytes 頁數(shù)：15 Pages | RENESAS 瑞薩 | RENESAS | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 文件：352.04 Kbytes 頁數(shù)：15 Pages | RENESAS 瑞薩 | RENESAS | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 文件：352.04 Kbytes 頁數(shù)：15 Pages | RENESAS 瑞薩 | RENESAS | ||
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES ? The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 文件：83.74 Kbytes 頁數(shù)：2 Pages | NEC 瑞薩 | NEC |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
244 |
現(xiàn)貨供應 |
詢價 | |||
NEC |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
NEC |
1923+ |
原廠封裝 |
8600 |
萊克訊原廠貨源每一片都來自原廠原裝現(xiàn)貨薄利多 |
詢價 | ||
NEC |
23+ |
27000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
Lumberg |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
Mean |
1931+ |
N/A |
567 |
加我qq或微信，了解更多詳細信息,體驗一站式購物 |
詢價 | ||
WEANWE |
25+ |
DC-DC |
41 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
MW/臺灣明緯 |
23+ |
DC-DC |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
MEAN WELL |
23+ |
DC-DC |
41 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
WEAN WE |
24+ |
DC-DC |
80000 |
只做自己庫存 全新原裝進口正品假一賠百 可開13%增 |
詢價 |
相關規(guī)格書
更多- SC1972
- PT7M8202B17TAE
- S40B
- SA04
- PD8XX3
- PM100DSA120
- PM150CSA060
- PM25RSK120
- PM75RSA060
- PM200CVA060
- PM200DSA060
- PM800HSA060
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- RM500HA-M
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- RM500UZ-2H
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- TM130EZ-H
- TM25T3A-H
- TM400CZ-M
- TM200GZ-2H
- TM60SA-6
- TM90EZ-24
- TM90SA-6
相關庫存
更多- SA02
- SA07
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- PM20CSJ060
- PM15RSH120
- PM15CTM060
- PM15RSH120
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- PM20CSJ060
- PM300CVA060
- PM600HSA120
- PM50RSA060
- PM75RVA060
- PS21312
- QM1000HA-2HB
- QM100TX1-HB
- QM150DY-HBK
- QM15
- QM200HC-M
- QM300HA-H
- QM30TX-HB
- QM50TX-H
- QM75DY-HB
- RM100CA-XXF
- RM100DZ-M
- RM100CZ-H
- RM10TN-H
- RM20DA-XXS
- RM250DZ-24
- RM30CZ-24
- RM30TC-40
- RM500UZ-M
- RM500DZ-24
- RM75TC-H
- TM10T3B-H
- TM130
- TM20RA-M
- TM200DZ-2H
- TM200PZ-2H
- TM55RZ-24
- TM400UZ-H
- TM90RZ-M
- TM90EZ-M
