GaAs MES FET

30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 mm gate length for increas

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RENESAS

瑞薩

DIN rail mountable type 30 ~ 240W

Features ● DIN rail standard mounting: EN50022-35x7.5 or 35x15 ● Universal input: 85 ~ 265VAC continuous input voltage ● Harmonic correction: IEC1000-3-2 ● Connection capacity: Solid or standard/Conductor sizes 0.2 ~ 2.5 mm2/24 ~ 14AWG. Standard ● CE marking: Low Voltage Directive ● Safety:

文件：674.52 Kbytes 頁數(shù)：3 Pages

LAMBDA

電盛蘭達

DIN rail mountable

Features ● DIN rail standard mounting: EN50022-35 x 7.5 or 35 x 15 ● Universal input: 85 ~ 265VAC continuous input voltage ● Harmonic correction: IEC1000-3-2 ● Connection capacity: Solid or standard/Conductor sizes 0.2 ~ 2.5 mm2/24 ~ 14AWG. Standard ● CE marking: Low Voltage Directive ● Saf

文件：259.89 Kbytes 頁數(shù)：3 Pages

TDK

東電化

DIN rail mountable

Features ● DIN rail standard mounting: EN50022-35 x 7.5 or 35 x 15 ● Universal input: 85 ~ 265VAC continuous input voltage ● Harmonic correction: IEC1000-3-2 ● Connection capacity: Solid or standard/Conductor sizes 0.2 ~ 2.5 mm2/24 ~ 14AWG. Standard ● CE marking: Low Voltage Directive ● Saf

文件：259.89 Kbytes 頁數(shù)：3 Pages

TDK

東電化

DIN rail mountable type 30 ~ 240W

Features ● DIN rail standard mounting: EN50022-35x7.5 or 35x15 ● Universal input: 85 ~ 265VAC continuous input voltage ● Harmonic correction: IEC1000-3-2 ● Connection capacity: Solid or standard/Conductor sizes 0.2 ~ 2.5 mm2/24 ~ 14AWG. Standard ● CE marking: Low Voltage Directive ● Safety:

文件：674.52 Kbytes 頁數(shù)：3 Pages

LAMBDA

電盛蘭達

Compandor

FEATURES * Complete compressor and expandor in one IChip * Temperature compensated * Greater than 110dB dynamic range * Operates down to 6VDC * System levels adjustable with external components * Distortion may be tnmmed out * Dynamic noise reduction systems * Voltage-controlled amplifie

文件：400.95 Kbytes 頁數(shù)：7 Pages

PHI

PHI

Compandor

FEATURES * Complete compressor and expandor in one IChip * Temperature compensated * Greater than 110dB dynamic range * Operates down to 6VDC * System levels adjustable with external components * Distortion may be tnmmed out * Dynamic noise reduction systems * Voltage-controlled amplifie

文件：400.95 Kbytes 頁數(shù)：7 Pages

PHI

PHI

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES ? This device is an ideal choice for low noise, high-gain at low current amplifications. ? NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ? NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz ? Maximum stable power gain: MSG = 22.5 dB T

文件：159.35 Kbytes 頁數(shù)：14 Pages

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瑞薩

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES ? This device is an ideal choice for low noise, high-gain at low current amplifications. ? NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ? NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz ? Maximum stable power gain: MSG = 22.5 dB T

文件：159.35 Kbytes 頁數(shù)：14 Pages

RENESAS

瑞薩

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES ? This device is an ideal choice for low noise, high-gain at low current amplifications. ? NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ? NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz ? Maximum stable power gain: MSG = 22.5 dB T

文件：159.35 Kbytes 頁數(shù)：14 Pages

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