N-CHANNEL GaAs MES FET

45 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 45 W of output power (CW) with high linear gain, high e

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RENESAS

瑞薩

N-CHANNEL GaAs MES FET

50 W L-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-50 is a 50 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS, and IMT2000 base station systems. It is capable of delivering 50 W of output power (CW) with high linear gain, high eff

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RENESAS

瑞薩

50 W L-BAND PUSH-PULL POWER GaAs MES FET

DESCRIPTION The NES1823P-50 is a 50 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS, and IMT2000 base station systems. It is capable of delivering 50 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primar

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NEC

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N-CHANNEL GaAs MES FET

70 W L, S-BAND PUSH-PULL POWER GaAs MES FET FEATURES ? Push-pull type N-channel GaAs MES FET ? VDS = 12.0 V operation ? High output power: Pout = 70 W TYP. ? High linear gain: GL = 11.0 dB TYP. ? High power added efficiency: hadd = 40 TYP. @ VDS = 12.0 V, IDset = 5.0 A (total), f = 2.20 GH

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RENESAS

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GaAs FET 45 W L, S-BAND SINGLE-END POWER GaAs FET

DESCRIPTION The NES1823S-45 is a 45 W single-end type GaAs FET designed for high power transmitter applications for WCDMA (IMT-2000) base station systems. It operates at 12 V and is capable of delivering 45 W of output power (CW) with high linear gain, high efficiency and low distortion. Its pr

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RENESAS

瑞薩

GaAs FET 45 W L, S-BAND SINGLE-END POWER GaAs FET

DESCRIPTION The NES1823S-45 is a 45 W single-end type GaAs FET designed for high power transmitter applications for WCDMA (IMT-2000) base station systems. It operates at 12 V and is capable of delivering 45 W of output power (CW) with high linear gain, high efficiency and low distortion. Its pr

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RENESAS

瑞薩

GaAs FET 90 W L, S-BAND SINGLE-END POWER GaAs FET

DESCRIPTION The NES1823S-90 is a 90 W single-end type GaAs FET designed for high power transmitter applications for IMT- 2000 base station systems. It is capable of delivering 90 W of output power (CW) with high linear gain, high efficiency and excellent distortion under the condition of 12.0 V

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RENESAS

瑞薩

1800W 3 channels Programmable IP66 Driver

Features Non-Isolated Class I driver No Afterglow Dim-to-Off with Standby Power ≤ 0.5W @ 230Vac Dimming Range: 0.4%-100% 3*600W Independent Programmable Channels & Support Common Anode Output Connection Max Remote Distance Up to 300 Meters Ultra High Efficiency (Up to 97%) Ful

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INVENTRONICS

英飛特電子

1800W 3 channels Programmable IP66 Driver

Features Non-Isolated Class I driver No Afterglow Dim-to-Off with Standby Power ≤ 0.5W @ 230Vac Dimming Range: 0.4%-100% 3*600W Independent Programmable Channels & Support Common Anode Output Connection Max Remote Distance Up to 300 Meters Ultra High Efficiency (Up to 97%) Ful

文件：1.10048 Mbytes 頁數(shù)：19 Pages

INVENTRONICS

英飛特電子

DIN rail mountable

Features ● DIN rail standard mounting: EN50022-35 x 7.5 or 35 x 15 ● Universal input: 85 ~ 265VAC continuous input voltage ● Harmonic correction: IEC1000-3-2 ● Connection capacity: Solid or standard/Conductor sizes 0.2 ~ 2.5 mm2/24 ~ 14AWG. Standard ● CE marking: Low Voltage Directive ● Saf

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TDK

東電化