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          首頁 >NES>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NESG2107M33-A

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES ? The device is an ideal choice for OSC, low noise, high-gain amplification ? SiGe technology adopted ? 3-pin super lead-less minimold (M33, 0804 PKG) packa

          文件:244.19 Kbytes 頁數(shù):11 Pages

          RENESAS

          瑞薩

          NESG2107M33-T3

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES ? The device is an ideal choice for OSC, low noise, high-gain amplification ? SiGe technology adopted ? 3-pin super lead-less minimold (M33, 0804 PKG) packa

          文件:244.19 Kbytes 頁數(shù):11 Pages

          RENESAS

          瑞薩

          NESG2107M33-T3-A

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES ? The device is an ideal choice for OSC, low noise, high-gain amplification ? SiGe technology adopted ? 3-pin super lead-less minimold (M33, 0804 PKG) packa

          文件:244.19 Kbytes 頁數(shù):11 Pages

          RENESAS

          瑞薩

          NESG210833

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES ? The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GH

          文件:232.19 Kbytes 頁數(shù):10 Pages

          RENESAS

          瑞薩

          NESG210833

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES ? The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GH

          文件:103.15 Kbytes 頁數(shù):8 Pages

          NEC

          瑞薩

          NESG210833-A

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES ? The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GH

          文件:103.15 Kbytes 頁數(shù):8 Pages

          NEC

          瑞薩

          NESG210833-T1B

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES ? The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GH

          文件:232.19 Kbytes 頁數(shù):10 Pages

          RENESAS

          瑞薩

          NESG210833-T1B

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES ? The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GH

          文件:103.15 Kbytes 頁數(shù):8 Pages

          NEC

          瑞薩

          NESG210833-T1B-A

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES ? The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GH

          文件:103.15 Kbytes 頁數(shù):8 Pages

          NEC

          瑞薩

          NESG220033

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES ? The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz ? PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) =

          文件:95.56 Kbytes 頁數(shù):8 Pages

          NEC

          瑞薩

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          23+
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          更多NES供應(yīng)商 更新時(shí)間2026-1-21 13:26:00
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