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          首頁 >NES>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NESG240034-T1

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES ? The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz ? PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set

          文件:221.09 Kbytes 頁數(shù):11 Pages

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          NESG240034-T1

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES ? The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz ? PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set

          文件:91.91 Kbytes 頁數(shù):9 Pages

          NEC

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          NESG240034-T1-A

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

          NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES ? The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz ? PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set

          文件:91.91 Kbytes 頁數(shù):9 Pages

          NEC

          瑞薩

          NESG250134

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PKG) FEATURES ? This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f =

          文件:342.14 Kbytes 頁數(shù):16 Pages

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          NESG250134-AZ

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PKG) FEATURES ? This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f =

          文件:342.14 Kbytes 頁數(shù):16 Pages

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          NESG250134-T1

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PKG) FEATURES ? This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f =

          文件:342.14 Kbytes 頁數(shù):16 Pages

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          NESG250134-T1-AZ

          NPN SILICON GERMANIUM RF TRANSISTOR

          NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PKG) FEATURES ? This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f =

          文件:342.14 Kbytes 頁數(shù):16 Pages

          RENESAS

          瑞薩

          NESG260234

          NPN SILICON GERMANIUM RF TRANSISTOR

          FEATURES ? This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz ? MSG (Maximum Stable Gain) = 23 dB TYP. @ VCE = 6 V, Ic = 100 mA, f = 460 MHz ? Using UHS2-HV pr

          文件:326.88 Kbytes 頁數(shù):14 Pages

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          NESG260234-AZ

          NPN SILICON GERMANIUM RF TRANSISTOR

          FEATURES ? This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz ? MSG (Maximum Stable Gain) = 23 dB TYP. @ VCE = 6 V, Ic = 100 mA, f = 460 MHz ? Using UHS2-HV pr

          文件:326.88 Kbytes 頁數(shù):14 Pages

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          NESG260234-T1

          NPN SILICON GERMANIUM RF TRANSISTOR

          FEATURES ? This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz ? MSG (Maximum Stable Gain) = 23 dB TYP. @ VCE = 6 V, Ic = 100 mA, f = 460 MHz ? Using UHS2-HV pr

          文件:326.88 Kbytes 頁數(shù):14 Pages

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          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          NEC
          24+
          244
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          23+
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          8510
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          1923+
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          8600
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          23+
          27000
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          2022+
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          6800
          全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
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          1931+
          N/A
          567
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          DC-DC
          41
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          23+
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          50000
          全新原裝正品現(xiàn)貨,支持訂貨
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          MEAN WELL
          23+
          DC-DC
          41
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          WEAN WE
          24+
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          80000
          只做自己庫存 全新原裝進(jìn)口正品假一賠百 可開13%增
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          更多NES供應(yīng)商 更新時(shí)間2026-1-21 8:31:00
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