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          首頁 >MRF1>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MRF10031

          MICROWAVE POWER TRANSISTOR

          Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. ? Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) ? 100 Tested for Load Mismatch at All Phase Angles with

          文件:101.2 Kbytes 頁數(shù):4 Pages

          MOTOROLA

          摩托羅拉

          MRF10031

          MICROWAVE POWER TRANSISTOR NPN SILICON

          Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. ? Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) ? 100 Tested for Load Mismatch at All Phase Angles with

          文件:163.59 Kbytes 頁數(shù):4 Pages

          MACOM

          MRF10031

          Microwave Long Pulse Power Transistor

          Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. ? Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) ? 100 Tested for Load Mismatch at All Phase Angles with

          文件:157.34 Kbytes 頁數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          MRF1004

          MICROWAVE POWER TRANSISTORS NPN SILICON

          Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ? Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak Minimum Gain = 10 dB ? 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSW

          文件:101.55 Kbytes 頁數(shù):5 Pages

          MACOM

          MRF1004

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: ? Class B and C Operation ? Common Base ? PG = 10 dB at 4.0 W/1090 MHz ? Omnigold? Metalization System

          文件:19.74 Kbytes 頁數(shù):1 Pages

          ASI

          MRF1004MA

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: ? Class B and C Operation ? Common Base ? PG = 10 dB at 4.0 W/1090 MHz ? Omnigold? Metalization System

          文件:19.74 Kbytes 頁數(shù):1 Pages

          ASI

          MRF1004MB

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI MRF1004MB is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: ? Class B and C Operation ? Common Base ? PG = 10 dB at 4.0 W/1090 MHz ? Omnigold? Metalization System

          文件:16.55 Kbytes 頁數(shù):1 Pages

          ASI

          MRF1004MB

          Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960-1215MHz

          Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ? Guaranteed performance @ 1090 MHz, 35 Vdc Output power = 4.0 W Peak Minimum gain = 10 dB ? 100 Tested for load mismatch at all phase angles with 10:1 VSWR ?

          文件:170.24 Kbytes 頁數(shù):5 Pages

          MA-COM

          MRF1004MB

          MICROWAVE POWER TRANSISTORS NPN SILICON

          Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ? Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak Minimum Gain = 10 dB ? 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSW

          文件:101.55 Kbytes 頁數(shù):5 Pages

          MACOM

          MRF10070

          MICROWAVE POWER TRANSISTOR

          The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. ? Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak Gain = 9.0 dB Min ? 100 Tested for Load Mismatch at All Phase A

          文件:97.78 Kbytes 頁數(shù):4 Pages

          MOTOROLA

          摩托羅拉

          技術(shù)參數(shù)

          • Min Frequency(MHz):

            960

          • Max Frequency(MHz):

            1215

          • Bias Voltage(V):

            28.0

          • Pout(W):

            5.00

          • Gain(dB):

            8.50

          • Efficiency(%):

            45

          • Type:

            Bipolar

          • Package:

            Flange Ceramic Pkg

          • Package Category:

            Ceramic Flange Mount

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          更多MRF1供應(yīng)商 更新時(shí)間2026-1-19 14:34:00
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