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          首頁 >MRF1>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MRF10120

          Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960-1215MHz

          Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. ? Guaranteed performance @ 1.215 GHz, 36 Vdc Output power = 120 W Peak Gain = 7.6 dB min., 8 .5 dB (ty

          文件:171.98 Kbytes 頁數(shù):5 Pages

          MA-COM

          MRF10120

          MICROWAVE POWER TRANSISTOR

          The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. ? Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) ? 100 Tested for

          文件:98.04 Kbytes 頁數(shù):4 Pages

          MOTOROLA

          摩托羅拉

          MRF10120

          MICROWAVE POWER TRANSISTOR NPN SILICON

          The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. ? Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) ? 100 Tested fo

          文件:128.12 Kbytes 頁數(shù):4 Pages

          MACOM

          MRF10150

          MICROWAVE POWER TRANSISTOR NPN SILICON

          The RF Line Microwave Pulse Power Transistor . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. ? Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ) ? 100 Tested for Load M

          文件:139.97 Kbytes 頁數(shù):4 Pages

          MACOM

          MRF10150

          MICROWAVE POWER TRANSISTOR

          The RF Line Microwave Pulse Power Transistor . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. ? Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ) ? 100 Tested for Load M

          文件:90.29 Kbytes 頁數(shù):4 Pages

          MOTOROLA

          摩托羅拉

          MRF10150

          Microwave Pulse Power Silicon NPN Transistor 150W (peak), 1025-1150MHz

          Microwave Pulse Power Silicon NPN Transistor 150W (peak), 1025–1150MHz Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. ? Guaranteed performance @ 1090 MHz Output power = 150 W Peak Gain = 9.5 dB min, 10.0 dB (typ.) ? 100

          文件:187.18 Kbytes 頁數(shù):6 Pages

          MA-COM

          MRF1015MA

          MICROWAVE POWER TRANSISTORS

          The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB ? 100 Tested f

          文件:110.64 Kbytes 頁數(shù):4 Pages

          MOTOROLA

          摩托羅拉

          MRF1015MB

          MICROWAVE POWER TRANSISTORS

          The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB ? 100 Tested f

          文件:110.64 Kbytes 頁數(shù):4 Pages

          MOTOROLA

          摩托羅拉

          MRF1015MX

          MICROWAVE POWER TRANSISTORS

          The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. ? Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB ? 100 Tested f

          文件:110.64 Kbytes 頁數(shù):4 Pages

          MOTOROLA

          摩托羅拉

          MRF1030

          UHF POWER TRANSISTOR

          The RF Line UHF Power Transistor . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1.0 GHz. ? Designed for Class A Linear Power Amplifiers ? Specified 25 Volt, 900 MHz Characteristics: Output Power — 3.0 Watts Power Gain — 7.5 dB Min, Class AB ?

          文件:54.5 Kbytes 頁數(shù):2 Pages

          MOTOROLA

          摩托羅拉

          技術(shù)參數(shù)

          • Min Frequency(MHz):

            960

          • Max Frequency(MHz):

            1215

          • Bias Voltage(V):

            28.0

          • Pout(W):

            5.00

          • Gain(dB):

            8.50

          • Efficiency(%):

            45

          • Type:

            Bipolar

          • Package:

            Flange Ceramic Pkg

          • Package Category:

            Ceramic Flange Mount

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          更多MRF1供應(yīng)商 更新時(shí)間2026-1-19 10:22:00
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