MOSFET BROADBAND RF POWER FET

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. N–Channel enhancement mode MOSFET ? Guaranteed performance at 150 MHz, 28 Vdc Output power = 45 W Power gain = 17 dB (min) Efficiency = 60 (min) ? Excellent thermal stability, ideally suited for C

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MACOM

VHF POWER MOSFET N-Channel Enhancement Mode

DESCRIPTION: The ASI MRF172 is Designed for wideband large-signal output and driver stages in the 2.0-200 MHz frequency range. FEATURES: ?PG= 10 dB Min. at 150 MHz ? 30:1 Load VSWRCapability ? Omnigold? Metalization System

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ASI

N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. ? Guaranteed Performance at 150 MHz, 28 V:

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MOTOROLA

摩托羅拉

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET ? Guaranteed

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MACOM

N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. ? Guaranteed Performance at 150 MHz, 28 V:

文件：107.38 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

The RF MOSFET Line 80W, 175MHz, 28V

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET ? G

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MA-COM

The RF MOSFET Line 125W, 200MHz

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. ? Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) ? Excellent Thermal Stability, Ideally Suited For Class AOperati

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MA-COM

N-CHANNEL MOS BROADBAND RF POWER FET

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. ? Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) ? Excellent Thermal Stability, Ideally Suited For Class AOperati

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MOTOROLA

摩托羅拉

RF Power Field-Effect Transistors

The RF MOSFET Line RF Power ???????Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transm

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MACOM