| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI MRF175GU is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz. 文件:38.37 Kbytes 頁(yè)數(shù):1 Pages | ASI | ASI | ||
The RF MOSFET Line 200/150W, 500MHz, 28V Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode 文件:447.7 Kbytes 頁(yè)數(shù):16 Pages | MA-COM | MA-COM | ||
N-CHANNEL MOS BROADBAND RF POWER FETs The RF MOSFET Line RF Power ???????Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state 文件:183.2 Kbytes 頁(yè)數(shù):8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI MRF175GV is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz. 文件:22.41 Kbytes 頁(yè)數(shù):1 Pages | ASI | ASI | ||
The RF MOSFET Line 200/150W, 500MHz, 28V Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode 文件:447.7 Kbytes 頁(yè)數(shù):16 Pages | MA-COM | MA-COM | ||
N-CHANNEL MOS BROADBAND RF POWER FETs The RF MOSFET Line RF Power ???????Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state 文件:183.2 Kbytes 頁(yè)數(shù):8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
N-CHANNEL MOS BROADBAND RF POWER FETs The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transm 文件:214.11 Kbytes 頁(yè)數(shù):11 Pages | MACOM | MACOM | ||
RF Power Field-Effect Transistors The RF MOSFET Line RF Power ???????Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state 文件:110.09 Kbytes 頁(yè)數(shù):2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
N-CHANNEL BROADBAND RF POWER FETs Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ? Guaranteed Performance 文件:138.89 Kbytes 頁(yè)數(shù):8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
N-CHANNEL BROADBAND RF POWER FETs Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ? Guaranteed Performance 文件:138.89 Kbytes 頁(yè)數(shù):8 Pages | MOTOROLA 摩托羅拉 | MOTOROLA |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-NPN
- 性質(zhì):
甚高頻 (VHF)_TR
- 封裝形式:
直插封裝
- 極限工作電壓:
36V
- 最大電流允許值:
0.4A
- 最大工作頻率:
220MHZ
- 引腳數(shù):
3
- 可代換的型號(hào):
BFR36,BLW11,3DA21A,
- 最大耗散功率:
1W
- 放大倍數(shù):
- 圖片代號(hào):
C-40
- vtest:
36
- htest:
220000000
- atest:
0.4
- wtest:
1
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
MRF
- 制造商:
L3 Narda-MITEQ
- 類別:
RF/IF,射頻/中頻和 RFID > RF 其它 IC 和模塊
- 包裝:
盒
- 描述:
L3 PRODUCT
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MPN |
2022+ |
3000 |
全新原裝 貨期兩周 |
詢價(jià) | |||
MICROCHIP/美國(guó)微芯 |
21+ |
QFN-40(6x6) |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
MACOM |
2024+ |
CASE211 |
233842 |
原裝正品,價(jià)格優(yōu)惠 |
詢價(jià) | ||
Microchip |
23+ |
2017-MI |
21500 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
FREESCALE |
17+ |
SMD |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
MICROCHIP/微芯 |
25+ |
QFN40 |
51637 |
全新原裝正品支持含稅 |
詢價(jià) | ||
24+ |
CAN |
500 |
詢價(jià) | ||||
Microchip |
23+ |
40-QFN |
65480 |
詢價(jià) | |||
恩XP |
1708+ |
? |
11520 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
ASI |
0349TP |
SMD |
13 |
只做原裝,現(xiàn)貨庫(kù)存 |
詢價(jià) |
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- NE5532
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更多- NE5532
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- SI7938DP
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- SI7948DP
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- SE1
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- PERICOMPI7C8150
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