| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-CHANNEL MOS BROADBAND RF POWER FETs Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ? Electrical Performance 文件:177.91 Kbytes 頁(yè)數(shù):10 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
N-CHANNEL MOS BROADBAND RF POWER FETs Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ? Electrical Performance 文件:177.91 Kbytes 頁(yè)數(shù):10 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
N-CHANNEL MOS BROADBAND RF POWER FETs Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ? Electrical Performance 文件:177.91 Kbytes 頁(yè)數(shù):10 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
The RF MOSFET Line 100W, 400MHz, 28V Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. N–Channel enhancement mode MOSFET ? Typical performance at 400 MH 文件:438.01 Kbytes 頁(yè)數(shù):11 Pages | MA-COM | MA-COM | ||
N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. ? Typical Performance at 400 MHz, 28 V: Output Power — 100 W 文件:186.2 Kbytes 頁(yè)數(shù):6 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz. ? Typical GSM Performanc 文件:343.23 Kbytes 頁(yè)數(shù):8 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz. ? Typical GSM Performanc 文件:343.23 Kbytes 頁(yè)數(shù):8 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz. ? Typical GSM Performanc 文件:343.23 Kbytes 頁(yè)數(shù):8 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930-1990 MHz. ? Typical GSM Performanc 文件:351.3 Kbytes 頁(yè)數(shù):8 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930-1990 MHz. ? Typical GSM Performanc 文件:351.3 Kbytes 頁(yè)數(shù):8 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-NPN
- 性質(zhì):
甚高頻 (VHF)_TR
- 封裝形式:
直插封裝
- 極限工作電壓:
36V
- 最大電流允許值:
0.4A
- 最大工作頻率:
220MHZ
- 引腳數(shù):
3
- 可代換的型號(hào):
BFR36,BLW11,3DA21A,
- 最大耗散功率:
1W
- 放大倍數(shù):
- 圖片代號(hào):
C-40
- vtest:
36
- htest:
220000000
- atest:
0.4
- wtest:
1
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
MRF
- 制造商:
L3 Narda-MITEQ
- 類別:
RF/IF,射頻/中頻和 RFID > RF 其它 IC 和模塊
- 包裝:
盒
- 描述:
L3 PRODUCT
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FREESCALE |
21+ |
高頻管 |
1372 |
只做原裝,絕對(duì)現(xiàn)貨,原廠代理商渠道,歡迎電話微信查 |
詢價(jià) | ||
FREESCALE |
17+ |
SMD |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
24+ |
CAN |
500 |
詢價(jià) | ||||
Microchip |
20+ |
24-VQFN |
3000 |
無線通信IC,大量現(xiàn)貨! |
詢價(jià) | ||
FREESCALE |
0951+ |
47 |
原裝/現(xiàn)貨 |
詢價(jià) | |||
MOT |
24+ |
原廠封裝 |
120 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
MOT |
25+ |
SSOP |
2700 |
全新原裝自家現(xiàn)貨優(yōu)勢(shì)! |
詢價(jià) | ||
FREESCALE |
24+ |
SOP16 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
恩XP |
21+ |
TO-220-3 |
8080 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
FREESCALE |
24+ |
SMD |
1680 |
FREESCALE專營(yíng)品牌進(jìn)口原裝現(xiàn)貨假一賠十 |
詢價(jià) |
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