<strong id="5lvfi"><dl id="5lvfi"></dl></strong>

      • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
        <th id="5lvfi"><progress id="5lvfi"></progress></th>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
        1. <del id="5lvfi"></del>

          首頁 >MRF>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MRF18030BR3

          THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS

          The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930

          文件:275.29 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MRF18030BSR3

          THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS

          The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930

          文件:275.29 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MRF1803BR3

          THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS

          The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930

          文件:275.29 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MRF1803BSR3

          THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS

          The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930

          文件:275.29 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MRF18060A

          RF Power Field Effect Transistors

          RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL

          文件:393.1 Kbytes 頁數(shù):12 Pages

          FREESCALEFreescale Semiconductor, Inc

          飛思卡爾飛思卡爾半導(dǎo)體

          MRF18060A

          RF POWER FIELD EFFECT TRANSISTORS

          The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB

          文件:405.18 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MRF18060ALR3

          RF Power Field Effect Transistors

          RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL

          文件:393.1 Kbytes 頁數(shù):12 Pages

          FREESCALEFreescale Semiconductor, Inc

          飛思卡爾飛思卡爾半導(dǎo)體

          MRF18060ALSR3

          RF Power Field Effect Transistors

          RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL

          文件:393.1 Kbytes 頁數(shù):12 Pages

          FREESCALEFreescale Semiconductor, Inc

          飛思卡爾飛思卡爾半導(dǎo)體

          MRF18060ALSR3

          RF POWER FIELD EFFECT TRANSISTORS

          The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB

          文件:405.18 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MRF18060AR3

          RF POWER FIELD EFFECT TRANSISTORS

          The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB

          文件:405.18 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          晶體管資料

          • 型號:

            MRF207

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            甚高頻 (VHF)_TR

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            36V

          • 最大電流允許值:

            0.4A

          • 最大工作頻率:

            220MHZ

          • 引腳數(shù):

            3

          • 可代換的型號:

            BFR36,BLW11,3DA21A,

          • 最大耗散功率:

            1W

          • 放大倍數(shù):

          • 圖片代號:

            C-40

          • vtest:

            36

          • htest:

            220000000

          • atest:

            0.4

          • wtest:

            1

          產(chǎn)品屬性

          • 產(chǎn)品編號:

            MRF

          • 制造商:

            L3 Narda-MITEQ

          • 類別:

            RF/IF,射頻/中頻和 RFID > RF 其它 IC 和模塊

          • 包裝:

          • 描述:

            L3 PRODUCT

          供應(yīng)商型號品牌批號封裝庫存備注價格
          FREESCALE
          21+
          高頻管
          1372
          只做原裝,絕對現(xiàn)貨,原廠代理商渠道,歡迎電話微信查
          詢價
          MINI
          24+
          SMD
          3600
          MINI專營品牌全新原裝正品假一賠十
          詢價
          MICROSEMI
          25+
          SOP-8
          1675
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          FREESCALE
          0951+
          47
          原裝/現(xiàn)貨
          詢價
          MICROCHIP/微芯
          24+
          NA
          32
          原裝現(xiàn)貨,專業(yè)配單專家
          詢價
          FREESCALE
          17+
          SMD
          6200
          100%原裝正品現(xiàn)貨
          詢價
          FREESCAL
          25+23+
          NI-780
          23481
          絕對原裝全新正品現(xiàn)貨/優(yōu)勢渠道商、原盤原包原盒
          詢價
          MOT
          24+
          原廠封裝
          120
          原裝現(xiàn)貨假一罰十
          詢價
          恩XP
          21+
          TO-220-3
          8080
          只做原裝,質(zhì)量保證
          詢價
          TI/德州儀器
          23+
          DFN
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          更多MRF供應(yīng)商 更新時間2026-1-19 17:54:00
            <strong id="5lvfi"><dl id="5lvfi"></dl></strong>

              • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
                <th id="5lvfi"><progress id="5lvfi"></progress></th>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                1. <del id="5lvfi"></del>
                  人人摸人人撸 | 亚洲丰满少妇XXXXⅩ高潮 | 无码操穴| 豆花视频在线免费观看 | 欧美成人电影一区二区 |