| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
RF Power Field Effect Transistor 175 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portabl 文件:463.71 Kbytes 頁(yè)數(shù):13 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 文件:471.04 Kbytes 頁(yè)數(shù):14 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N?Channel Enhancement?Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large?signal, common source amplifier applications in 7.5 文件:229.05 Kbytes 頁(yè)數(shù):12 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N?Channel Enhancement?Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large?signal, common source amplifier applications in 7.5 文件:472.35 Kbytes 頁(yè)數(shù):12 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 文件:479.56 Kbytes 頁(yè)數(shù):16 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 文件:479.56 Kbytes 頁(yè)數(shù):16 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 文件:277.99 Kbytes 頁(yè)數(shù):15 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common 文件:345.48 Kbytes 頁(yè)數(shù):16 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier appli 文件:288.84 Kbytes 頁(yè)數(shù):16 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
RF Power Field Effect Transistor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12. 文件:757.51 Kbytes 頁(yè)數(shù):20 Pages | MOTOROLA 摩托羅拉 | MOTOROLA |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-NPN
- 性質(zhì):
甚高頻 (VHF)_TR
- 封裝形式:
直插封裝
- 極限工作電壓:
36V
- 最大電流允許值:
0.4A
- 最大工作頻率:
220MHZ
- 引腳數(shù):
3
- 可代換的型號(hào):
BFR36,BLW11,3DA21A,
- 最大耗散功率:
1W
- 放大倍數(shù):
- 圖片代號(hào):
C-40
- vtest:
36
- htest:
220000000
- atest:
0.4
- wtest:
1
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
MRF
- 制造商:
L3 Narda-MITEQ
- 類別:
RF/IF,射頻/中頻和 RFID > RF 其它 IC 和模塊
- 包裝:
盒
- 描述:
L3 PRODUCT
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MINI |
24+ |
SMD |
3600 |
MINI專營(yíng)品牌全新原裝正品假一賠十 |
詢價(jià) | ||
FREESCALE |
17+ |
SMD |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
MOT |
24+ |
原廠封裝 |
120 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
FREESCALE |
21+ |
高頻管 |
1372 |
只做原裝,絕對(duì)現(xiàn)貨,原廠代理商渠道,歡迎電話微信查 |
詢價(jià) | ||
MOTOROLA/摩托羅拉 |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
25+ |
50 |
普通 |
詢價(jià) | ||||
24+ |
CAN |
500 |
詢價(jià) | ||||
MICROSEMI |
25+ |
SOP-8 |
1675 |
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件! |
詢價(jià) | ||
FREESC |
1902+ |
SMD |
2734 |
代理品牌 |
詢價(jià) | ||
MOT/FSL |
15+ |
SMD |
56 |
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十 |
詢價(jià) |
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