RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI MRF175GU is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz.

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ASI

The RF MOSFET Line 200/150W, 500MHz, 28V

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode

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MA-COM

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ???????Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

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MOTOROLA

摩托羅拉

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transm

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MACOM

RF Power Field-Effect Transistors

The RF MOSFET Line RF Power ???????Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

The RF MOSFET Line 200/150W, 500MHz, 28V

文件：447.7 Kbytes 頁數(shù)：16 Pages

MA-COM

The RF MOSFET Line

文件：447.7 Kbytes 頁數(shù)：16 Pages

MA-COM

The RF MOSFET Line 200/150W, 500MHz, 28V

文件：1.04918 Mbytes 頁數(shù)：17 Pages

MA-COM

N-CHANNEL MOS BROADBAND RF POWER FETs

文件：209 Kbytes 頁數(shù)：10 Pages

MACOM

The RF MOSFET Line 200/150W, 500MHz, 28V

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ·Guaranteed Performance: Output Power — 200 W, Power Gain — 14 dB (Typ.) Efficiency — 65% (Typ.)\n·100% RuggednessTested at a Rated output Power\n·MRF175GV @ 28 V, 225 MHz (“V” Suffix)\n·Low Crss — 20 pF typ @ VDS = 28 V\n·Low Thermal Resistance;

MACOM