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          首頁 >MRF>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MRF18085ALR3

          RF Power Field Effect Transistors

          Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805-1880 MHz. ? GSM and GSM EDGE P

          文件:394.89 Kbytes 頁數(shù):8 Pages

          FREESCALEFreescale Semiconductor, Inc

          飛思卡爾飛思卡爾半導(dǎo)體

          MRF18085ALSR3

          RF Power Field Effect Transistors

          The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu

          文件:379.56 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MRF18085ALSR3

          The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

          The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu

          文件:409.77 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MRF18085ALSR3

          RF Power Field Effect Transistors

          Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805-1880 MHz. ? GSM and GSM EDGE P

          文件:394.89 Kbytes 頁數(shù):8 Pages

          FREESCALEFreescale Semiconductor, Inc

          飛思卡爾飛思卡爾半導(dǎo)體

          MRF18085AR3

          The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

          The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu

          文件:409.77 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MRF18085AR3

          RF Power Field Effect Transistors

          The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu

          文件:379.56 Kbytes 頁數(shù):8 Pages

          MOTOROLA

          摩托羅拉

          MRF18085B

          RF Power Field Effect Transistors

          The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. ? GSM and GSM EDGE Performance, Full F

          文件:610.58 Kbytes 頁數(shù):12 Pages

          MOTOROLA

          摩托羅拉

          MRF18085B

          RF Power Field Effect Transistors

          RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. ? GSM and GSM EDGE Performance, Full Frequency Band (193

          文件:445.63 Kbytes 頁數(shù):12 Pages

          FREESCALEFreescale Semiconductor, Inc

          飛思卡爾飛思卡爾半導(dǎo)體

          MRF18085BLR3

          RF Power Field Effect Transistors

          RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. ? GSM and GSM EDGE Performance, Full Frequency Band (193

          文件:445.63 Kbytes 頁數(shù):12 Pages

          FREESCALEFreescale Semiconductor, Inc

          飛思卡爾飛思卡爾半導(dǎo)體

          MRF18085BLSR3

          RF Power Field Effect Transistors

          RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. ? GSM and GSM EDGE Performance, Full Frequency Band (193

          文件:445.63 Kbytes 頁數(shù):12 Pages

          FREESCALEFreescale Semiconductor, Inc

          飛思卡爾飛思卡爾半導(dǎo)體

          晶體管資料

          • 型號:

            MRF207

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            甚高頻 (VHF)_TR

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            36V

          • 最大電流允許值:

            0.4A

          • 最大工作頻率:

            220MHZ

          • 引腳數(shù):

            3

          • 可代換的型號:

            BFR36,BLW11,3DA21A,

          • 最大耗散功率:

            1W

          • 放大倍數(shù):

          • 圖片代號:

            C-40

          • vtest:

            36

          • htest:

            220000000

          • atest:

            0.4

          • wtest:

            1

          產(chǎn)品屬性

          • 產(chǎn)品編號:

            MRF

          • 制造商:

            L3 Narda-MITEQ

          • 類別:

            RF/IF,射頻/中頻和 RFID > RF 其它 IC 和模塊

          • 包裝:

          • 描述:

            L3 PRODUCT

          供應(yīng)商型號品牌批號封裝庫存備注價格
          MOTOROLA/摩托羅拉
          25+
          SSOP16
          950
          就找我吧!--邀您體驗(yàn)愉快問購元件!
          詢價
          恩XP
          22+
          9000
          原廠渠道,現(xiàn)貨配單
          詢價
          MOTOROLA
          22+
          control
          3000
          原裝正品,支持實(shí)單
          詢價
          恩XP
          24+
          TO-270
          39500
          進(jìn)口原裝現(xiàn)貨 支持實(shí)單價優(yōu)
          詢價
          MOT
          25+
          N/A
          2232
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          24+
          CAN
          500
          詢價
          Microchip
          23+
          2017-MI
          21500
          受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
          詢價
          MOTOROLA
          23+
          TO-57s
          450
          專營高頻管模塊,全新原裝!
          詢價
          恩XP
          21+
          1000
          只做原裝,供應(yīng)終端,庫存和價格請咨詢?yōu)闇?zhǔn)
          詢價
          MA/COM
          23+
          高頻管
          1000
          原裝正品,假一罰十
          詢價
          更多MRF供應(yīng)商 更新時間2022-12-6 9:27:00
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