The RF MOSFET Line 125W, 200MHz

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. ? Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) ? Excellent Thermal Stability, Ideally Suited For Class AOperati

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MA-COM

N-CHANNEL MOS BROADBAND RF POWER FET

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. ? Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) ? Excellent Thermal Stability, Ideally Suited For Class AOperati

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MOTOROLA

摩托羅拉

N-CHANNEL MOS BROADBAND RF POWER FET

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MACOM

The RF MOSFET Line 125W, 200MHz

文件：333.77 Kbytes 頁數(shù)：11 Pages

MA-COM

The RF MOSFET Line 125W, 200MHz

Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. ·N–Channel Enhancement Mode MOSFET\n·100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc\n·Facilitates Manual Gain Control, ALC and Modulation Techniques\n·Excellent Thermal Stability; ideally Suite for Class A Operations\n·Guaranteed Performance at 150 MHz, 28 Vdc: Output p;

MACOM

Package：211-11，2 型；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 150MHZ 211-11

MACOM Technology Solutions

The RF MOSFET Line

文件：333.77 Kbytes 頁數(shù)：11 Pages

MA-COM

The RF MOSFET Line 125W, 200MHz

文件：842.41 Kbytes 頁數(shù)：12 Pages

MA-COM