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          首頁 >IRL>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRL3202SPBF

          HEXFET Power MOSFET

          Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. ●

          文件:234.38 Kbytes 頁數(shù):9 Pages

          IRF

          IRL3215

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:144.54 Kbytes 頁數(shù):8 Pages

          IRF

          IRL3303L

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:158.09 Kbytes 頁數(shù):10 Pages

          IRF

          IRL3303S

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:158.09 Kbytes 頁數(shù):10 Pages

          IRF

          IRL3502

          HEXFET Power MOSFET

          Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. Advanced Process

          文件:76.65 Kbytes 頁數(shù):7 Pages

          IRF

          IRL3705N

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:106.74 Kbytes 頁數(shù):8 Pages

          IRF

          IRL3705N

          N-Channel MOSFET Transistor

          ? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤10m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operatio

          文件:339.15 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRL3705N/L

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:188.49 Kbytes 頁數(shù):10 Pages

          IRF

          IRL3705NLPBF

          HEXFET Power MOSFET

          文件:294.11 Kbytes 頁數(shù):10 Pages

          IRF

          IRL3705NPBF

          HEXFET? Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:2.39581 Mbytes 頁數(shù):8 Pages

          IRF

          技術參數(shù)

          • OPN:

            IRL1004PBF

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            40 V

          • RDS (on) @10V max:

            6.5 m?

          • RDS (on) @4.5V max:

            9 m?

          • ID @25°C max:

            130 A

          • QG typ @4.5V:

            66.7 nC

          • Polarity:

            N

          • VGS(th) min:

            1 V

          • Technology:

            IR MOSFET?

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          更多IRL供應商 更新時間2026-1-21 11:08:00
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