| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRL | IRL IMPULSION LOCK SWITCH 2 & 3 POSITION FEATURES 2 keys per switch, up to 200 differ key combinations available Keys can be inserted either way up Master key versions to order Double Pole DPST Rear panel depth - 文件：888.34 Kbytes 頁數(shù)：2 Pages | LORLIN | LORLIN | |
IRL | IRL IMPULSION LOCK SWITCHES GENERAL FEATURES o Made in UK. o Miniature key-operated Lock switch. o Double pole o Up to 200 key combinations – keys to differ. (D reference at end of part no) o Common keys available – keys to pass. o Keys are double entry (they can be inserted into the lock either way up). o Occupies 文件：452.81 Kbytes 頁數(shù)：1 Pages | LORLIN | LORLIN | |
5mm Infrared LED , T-1 3/4 Descriptions ? EVERLIGHT’s Infrared Emitting Diode (IR333C) is a high intensity diode , molded in a water clear plastic package. ? The device is spectrally matched with phototransistor , photodiode and infrared receiver module. Features ? High reliability ? High radiant intensity ? Peak wave 文件：183.96 Kbytes 頁數(shù)：7 Pages | EVERLIGHT 臺灣億光 | EVERLIGHT | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel 文件：89.37 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
N-Channel MOSFET Transistor ? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤6.5m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：338.58 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Advanced Process Technology Ultra Low On-Resistance Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know 文件：124.65 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know 文件：206.53 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel 文件：164.73 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor ? FEATURES ? With TO-263( D2PAK ) packaging ? High speed switching ? Low gate input resistance ? Standard level gate drive ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Power supply ? Switching a 文件：263.54 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Advanced Process Technology Ultra Low On-Resistance Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know 文件：124.65 Kbytes 頁數(shù)：10 Pages | IRF | IRF |
技術參數(shù)
- OPN：
IRL1004PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
40 V
- RDS (on) @10V max：
6.5 m?
- RDS (on) @4.5V max：
9 m?
- ID @25°C max：
130 A
- QG typ @4.5V：
66.7 nC
- Polarity：
N
- VGS(th) min：
1 V
- Technology：
IR MOSFET?
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TRANSISTORMO |
25+ |
SMD2 |
2100 |
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙ |
詢價 | ||
ir |
23+ |
9000 |
原裝真實現(xiàn)貨庫存,專業(yè)定貨,特價 |
詢價 | |||
IOR |
24+ |
SMD |
2500 |
新 |
詢價 | ||
IR |
23+ |
TO-220 |
2870 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 | ||
IR |
24+ |
SOT23-3 |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
ir |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
IR |
23+ |
TO220 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
IR |
17+ |
SOT-23 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
24+ |
SOT-23 |
9544 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
2016+ |
SOT-163 |
178000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 |
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