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          首頁(yè) >IRL>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRL3102PBF

          HEXFET Power MOSFET

          Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. ●

          文件:131.31 Kbytes 頁(yè)數(shù):7 Pages

          IRF

          IRL3102S

          Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A)

          Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a s

          文件:90.92 Kbytes 頁(yè)數(shù):8 Pages

          IRF

          IRL3102SPBF

          HEXFET Power MOSFET

          Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a s

          文件:322.7 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          IRL3103

          Power MOSFET(Vdds=30V, Rds(on)=12mohm, Id=64A)

          Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

          文件:214.15 Kbytes 頁(yè)數(shù):8 Pages

          IRF

          IRL3103D1

          FETKY??MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A)

          Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconne

          文件:94.58 Kbytes 頁(yè)數(shù):6 Pages

          IRF

          IRL3103D1PBF

          Generation 5 Technology

          Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconne

          文件:330.39 Kbytes 頁(yè)數(shù):7 Pages

          IRF

          IRL3103D1S

          FETKY??MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A)

          Description The FETKY family of co-packaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconn

          文件:126.62 Kbytes 頁(yè)數(shù):7 Pages

          IRF

          IRL3103D1S

          5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS,ADJUSTABLE LDO AND 200mA ON-BOARD LDO

          DESCRIPTION The IRU3007 controller IC is specifically designed to meet Intel specification for Pentium II? microprocessor applications as well as the next generation of P6 family processors. The IRU3007 provides a single chip controller IC for the Vcore, LDO controller for GTL+ and an internal 20

          文件:100.38 Kbytes 頁(yè)數(shù):17 Pages

          IRF

          IRL3103D1SPBF

          Generation 5 Technology

          文件:308.47 Kbytes 頁(yè)數(shù):8 Pages

          IRF

          IRL3103D2

          FETKY??MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A)

          Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconne

          文件:116.27 Kbytes 頁(yè)數(shù):6 Pages

          IRF

          技術(shù)參數(shù)

          • OPN:

            IRL1004PBF

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            40 V

          • RDS (on) @10V max:

            6.5 m?

          • RDS (on) @4.5V max:

            9 m?

          • ID @25°C max:

            130 A

          • QG typ @4.5V:

            66.7 nC

          • Polarity:

            N

          • VGS(th) min:

            1 V

          • Technology:

            IR MOSFET?

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          更多IRL供應(yīng)商 更新時(shí)間2026-1-21 10:12:00
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