| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFET Power MOSFET Coming Soon. If you have some information on related parts, please share useful information by adding links below. 文件：288.6 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
1.5 A Switch-Mode Power Supply with Linear Regulator 1.5 A Switch-Mode Power Supply with Linear Regulator The 34701 provides the means to efficiently supply the Freescale Power QUICC? I, II, and other families of Freescale microprocessors and DSPs. The 34701 incorporates a high performance switching regulator, providing the direct supply for the mi 文件：739.42 Kbytes 頁(yè)數(shù)：38 Pages | FREESCALEFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | FREESCALE | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：124.56 Kbytes 頁(yè)數(shù)：8 Pages | IRF | IRF | ||
N-Channel MOSFET Transistor ? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.026? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：338.31 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
HEXFET POWER MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：344.25 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.026廓 , ID = 55A ) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：1.54583 Mbytes 頁(yè)數(shù)：9 Pages | IRF | IRF | ||
絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor ? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications 文件：189.29 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
HEXFET POWER MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：344.25 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：689.54 Kbytes 頁(yè)數(shù)：11 Pages | IRF | IRF | ||
Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A) Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. ● 文件：96.07 Kbytes 頁(yè)數(shù)：7 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRL1004PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
40 V
- RDS (on) @10V max：
6.5 m?
- RDS (on) @4.5V max：
9 m?
- ID @25°C max：
130 A
- QG typ @4.5V：
66.7 nC
- Polarity：
N
- VGS(th) min：
1 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
IR |
24+ |
SOT23 |
20000 |
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅！！ |
詢價(jià) | ||
INTERSIL |
23+ |
65480 |
詢價(jià) | ||||
IOR |
24+ |
SMD |
2500 |
新 |
詢價(jià) | ||
IR |
26+ |
原廠原封裝 |
86720 |
全新原裝正品價(jià)格最實(shí)惠 假一賠百 |
詢價(jià) | ||
I |
23+ |
D-PAK |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
IR優(yōu)勢(shì) |
SOT-23 |
3164 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價(jià) | |||
IR |
23+ |
TO-262 |
40226 |
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | ||
IR |
24+ |
SOT23-3 |
593625 |
MOS管優(yōu)勢(shì)產(chǎn)品熱賣中 |
詢價(jià) | ||
IR |
18+ |
QFN8 |
1280 |
一個(gè)電話就有貨,價(jià)格很低 |
詢價(jià) |
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