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首頁(yè) >IRL>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
IRL1404ZSPBF	文件：793.38 Kbytes Page：13 Pages	AUTOMOTIVE MOSFET HEXFET? Power MOSFET Description This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb 文件：793.38 Kbytes 頁(yè)數(shù)：13 Pages	IRF	IRF
IRL2203	文件：221.17 Kbytes Page：8 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：221.17 Kbytes 頁(yè)數(shù)：8 Pages	IRF	IRF
IRL2203N	文件：221.17 Kbytes Page：8 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：221.17 Kbytes 頁(yè)數(shù)：8 Pages	IRF	IRF
IRL2203NL	文件：132.36 Kbytes Page：10 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：132.36 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL2203NLPBF	文件：231.35 Kbytes Page：11 Pages	HEXFET? Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：231.35 Kbytes 頁(yè)數(shù)：11 Pages	IRF	IRF
IRL2203NLPBF	文件：295.79 Kbytes Page：10 Pages	Advanced Process Technology Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：295.79 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL2203NPBF	文件：183.07 Kbytes Page：8 Pages	HEXFET? Power MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：183.07 Kbytes 頁(yè)數(shù)：8 Pages	IRF	IRF
IRL2203NS	文件：132.36 Kbytes Page：10 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：132.36 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL2203NSPBF	文件：295.79 Kbytes Page：10 Pages	Advanced Process Technology Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：295.79 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL2203NSPBF	文件：231.35 Kbytes Page：11 Pages	HEXFET? Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：231.35 Kbytes 頁(yè)數(shù)：11 Pages	IRF	IRF

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技術(shù)參數(shù)

OPN：
IRL1004PBF
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
40 V
RDS (on) @10V max：
6.5 m?
RDS (on) @4.5V max：
9 m?
ID @25°C max：
130 A
QG typ @4.5V：
66.7 nC
Polarity：
N
VGS(th) min：
1 V
Technology：
IR MOSFET?

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市福安甌科技有限公司	IRLR8503TR(30V.34A)	TRANSISTORMO	25+	SMD2	2100	⊙⊙新加坡大量現(xiàn)貨庫(kù)存,深圳常備現(xiàn)貨!歡迎查詢!⊙	詢價(jià)
深圳市榮澤信電子科技有限公司	IRLL014N	ir	23+		9000	原裝真實(shí)現(xiàn)貨庫(kù)存,專業(yè)定貨,特價(jià)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRLMS5703TR	IOR	24+	SMD	2500	新	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	IRLZ44N	IR	23+	TO-220	2870	絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!	詢價(jià)
深圳市豪邁興電子有限公司	IRLML6302TRPBF	IR	24+	SOT23-3	5825	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!	詢價(jià)
深圳市歐立現(xiàn)代科技有限公司	IRLU3303	ir	24+	N/A	6980	原裝現(xiàn)貨,可開(kāi)13%稅票	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	IRL3103	IR	23+	TO220	5000	原裝正品,假一罰十	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	IRLML2803TRPBF	IR	17+	SOT-23	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市弘為電子有限公司	IRLML6402TR	IR	24+	SOT-23	9544	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市凌旭科技有限公司	IRLMS1503TRPBF	IR	2016+	SOT-163	178000	只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!	詢價(jià)

更多IRL供應(yīng)商更新時(shí)間2026-1-20 11:02:00

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