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          首頁 >IRL>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRL3705NPBF

          HEXFET? Power MOSFET

          Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ex

          文件:449.99 Kbytes 頁數(shù):9 Pages

          INFINEON

          英飛凌

          IRL3705NS

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:188.49 Kbytes 頁數(shù):10 Pages

          IRF

          IRL3705NSPBF

          HEXFET Power MOSFET

          文件:294.11 Kbytes 頁數(shù):10 Pages

          IRF

          IRL3705Z

          AUTOMOTIVE MOSFET

          VDSS = 55V RDS(on) = 8.0m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

          文件:296.88 Kbytes 頁數(shù):12 Pages

          IRF

          IRL3705ZL

          AUTOMOTIVE MOSFET

          VDSS = 55V RDS(on) = 8.0m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

          文件:296.88 Kbytes 頁數(shù):12 Pages

          IRF

          IRL3705ZLPBF

          HEXFET? Power MOSFET

          VDSS = 55V RDS(on) = 8.0m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

          文件:289.46 Kbytes 頁數(shù):13 Pages

          IRF

          IRL3705ZPBF

          HEXFET? Power MOSFET

          VDSS = 55V RDS(on) = 8.0m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

          文件:289.46 Kbytes 頁數(shù):13 Pages

          IRF

          IRL3705ZS

          AUTOMOTIVE MOSFET

          VDSS = 55V RDS(on) = 8.0m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

          文件:296.88 Kbytes 頁數(shù):12 Pages

          IRF

          IRL3705ZSPBF

          HEXFET? Power MOSFET

          VDSS = 55V RDS(on) = 8.0m? ID = 75A Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

          文件:289.46 Kbytes 頁數(shù):13 Pages

          IRF

          IRL3713

          SMPS MOSFET

          Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power 100 RG Tested Benefits Ultra-Low Gate Impedance Very Low RDS(on)a t 4.5V VGS Fully Characterized Av

          文件:236.56 Kbytes 頁數(shù):11 Pages

          IRF

          技術(shù)參數(shù)

          • OPN:

            IRL1004PBF

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            40 V

          • RDS (on) @10V max:

            6.5 m?

          • RDS (on) @4.5V max:

            9 m?

          • ID @25°C max:

            130 A

          • QG typ @4.5V:

            66.7 nC

          • Polarity:

            N

          • VGS(th) min:

            1 V

          • Technology:

            IR MOSFET?

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          更多IRL供應(yīng)商 更新時間2026-1-21 10:12:00
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