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          首頁 >IRL>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRL2203NSTRLPBF

          Advanced Process Technology

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

          文件:295.79 Kbytes 頁數(shù):10 Pages

          IRF

          IRL2203S

          Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A??

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:173.01 Kbytes 頁數(shù):9 Pages

          IRF

          IRL2505

          Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:178.32 Kbytes 頁數(shù):10 Pages

          IRF

          IRL2505L

          Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:178.32 Kbytes 頁數(shù):10 Pages

          IRF

          IRL2505LPBF

          HEXFET Power MOSFET

          Coming Soon. If you have some information on related parts, please share useful information by adding links below.

          文件:288.6 Kbytes 頁數(shù):10 Pages

          IRF

          IRL2505S

          Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:178.32 Kbytes 頁數(shù):10 Pages

          IRF

          IRL2505S/L

          Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:178.32 Kbytes 頁數(shù):10 Pages

          IRF

          IRL2505SPBF

          HEXFET Power MOSFET

          Coming Soon. If you have some information on related parts, please share useful information by adding links below.

          文件:288.6 Kbytes 頁數(shù):10 Pages

          IRF

          IRL2505SSLASHL

          Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:178.32 Kbytes 頁數(shù):10 Pages

          IRF

          IRL2505STRLPBF

          HEXFET Power MOSFET

          Coming Soon. If you have some information on related parts, please share useful information by adding links below.

          文件:288.6 Kbytes 頁數(shù):10 Pages

          IRF

          技術(shù)參數(shù)

          • OPN:

            IRL1004PBF

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            40 V

          • RDS (on) @10V max:

            6.5 m?

          • RDS (on) @4.5V max:

            9 m?

          • ID @25°C max:

            130 A

          • QG typ @4.5V:

            66.7 nC

          • Polarity:

            N

          • VGS(th) min:

            1 V

          • Technology:

            IR MOSFET?

          供應商型號品牌批號封裝庫存備注價格
          ir
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          更多IRL供應商 更新時間2025-8-28 16:26:00
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