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          首頁 >IRL>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRL3716LPBF

          SMPS MOSFET

          SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Compu

          文件:286.58 Kbytes 頁數(shù):12 Pages

          IRF

          IRL3716PBF

          SMPS MOSFET

          SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Compu

          文件:286.58 Kbytes 頁數(shù):12 Pages

          IRF

          IRL3716S

          HEXFET Power MOSFET

          SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Compu

          文件:230.17 Kbytes 頁數(shù):11 Pages

          IRF

          IRL3716SPBF

          SMPS MOSFET

          SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Compu

          文件:286.58 Kbytes 頁數(shù):12 Pages

          IRF

          IRL3716STRLPBF

          SMPS MOSFET

          SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Compu

          文件:286.58 Kbytes 頁數(shù):12 Pages

          IRF

          IRL3803

          N-Channel MOSFET Transistor

          ? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤6m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:338.72 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRL3803

          Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A??

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

          文件:365.66 Kbytes 頁數(shù):8 Pages

          IRF

          IRL3803L

          Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A??

          Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

          文件:436.44 Kbytes 頁數(shù):10 Pages

          IRF

          IRL3803LPBF

          HEXFET? Power MOSFET

          Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

          文件:398.23 Kbytes 頁數(shù):10 Pages

          IRF

          IRL3803LPBF

          Advanced Process Technology

          Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

          文件:402.96 Kbytes 頁數(shù):11 Pages

          IRF

          技術參數(shù)

          • OPN:

            IRL1004PBF

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            40 V

          • RDS (on) @10V max:

            6.5 m?

          • RDS (on) @4.5V max:

            9 m?

          • ID @25°C max:

            130 A

          • QG typ @4.5V:

            66.7 nC

          • Polarity:

            N

          • VGS(th) min:

            1 V

          • Technology:

            IR MOSFET?

          供應商型號品牌批號封裝庫存備注價格
          ir
          23+
          9000
          原裝真實現(xiàn)貨庫存,專業(yè)定貨,特價
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          IR
          25+
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          694
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          IR
          24+
          SOT-23
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          IR
          2018+
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          INFINEON
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          con
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          IR
          2016+
          SOT-163
          178000
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          詢價
          三年內
          1983
          只做原裝正品
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          IR
          24+
          TO-252
          66800
          原廠授權一級代理,專注汽車、醫(yī)療、工業(yè)、新能源!
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          IRF
          兩年內
          NA
          924
          實單價格可談
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          IR
          20+
          TO-252
          5600
          樣品可出,原裝現(xiàn)貨
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          更多IRL供應商 更新時間2025-8-28 16:26:00
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