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首頁(yè) >IRL>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
IRL1004SPBF	文件：206.53 Kbytes Page：10 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know 文件：206.53 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL1104	文件：90.45 Kbytes Page：8 Pages	HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.008? ID = 104A? Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged 文件：90.45 Kbytes 頁(yè)數(shù)：8 Pages	IRF	IRF
IRL1104L	文件：203.35 Kbytes Page：11 Pages	Logic-Level Gate Drive VDSS = 40V RDS(on) = 0.008? ID = 104A? Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged 文件：203.35 Kbytes 頁(yè)數(shù)：11 Pages	IRF	IRF
IRL1104LPBF	文件：222.92 Kbytes Page：10 Pages	HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.008? ID = 104A? Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged 文件：222.92 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL1104PBF	文件：172.66 Kbytes Page：9 Pages	Logic-Level Gate Drive VDSS = 40V RDS(on) = 0.008? ID = 104A? Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged 文件：172.66 Kbytes 頁(yè)數(shù)：9 Pages	IRF	IRF
IRL1104S	文件：203.35 Kbytes Page：11 Pages	Logic-Level Gate Drive VDSS = 40V RDS(on) = 0.008? ID = 104A? Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged 文件：203.35 Kbytes 頁(yè)數(shù)：11 Pages	IRF	IRF
IRL1104S	文件：194.25 Kbytes Page：10 Pages	Advanced Process Technology Logic-Level Gate Drive VDSS = 40V RDS(on) = 0.008? ID = 104A? Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged 文件：194.25 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL1104SPBF	文件：222.92 Kbytes Page：10 Pages	HEXFET Power MOSFET VDSS = 40V RDS(on) = 0.008? ID = 104A? Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged 文件：222.92 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL1404	文件：124.86 Kbytes Page：8 Pages	HEXFET Power MOSFET Description Seventh Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件：124.86 Kbytes 頁(yè)數(shù)：8 Pages	IRF	IRF
IRL1404	文件：339.15 Kbytes Page：2 Pages	N-Channel MOSFET Transistor ? DESCRIPTION ? Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤4.0m? ? Enhancement mode ? Fast Switching 文件：339.15 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC

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技術(shù)參數(shù)

OPN：
IRL1004PBF
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
40 V
RDS (on) @10V max：
6.5 m?
RDS (on) @4.5V max：
9 m?
ID @25°C max：
130 A
QG typ @4.5V：
66.7 nC
Polarity：
N
VGS(th) min：
1 V
Technology：
IR MOSFET?

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市澳億芯電子科技有限公司	IRLML6302TR	IR	25+	SOT23	694	旗艦店	詢(xún)價(jià)
北京京北通宇電子元件有限公司	IRLZ34NSTRLPBF	INFINEON	24+	con	10000	查現(xiàn)貨到京北通宇商城	詢(xún)價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	IRLZ44N	IR	23+	TO-220	2870	絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!	詢(xún)價(jià)
深圳良洲科技有限公司	IRLML6246TRPBF	IRF	兩年內(nèi)	NA	924	實(shí)單價(jià)格可談	詢(xún)價(jià)
深圳市榮澤信電子科技有限公司	IRLL014N	ir	23+		9000	原裝真實(shí)現(xiàn)貨庫(kù)存,專(zhuān)業(yè)定貨,特價(jià)	詢(xún)價(jià)
瀚佳科技(深圳)有限公司	IRLL110TRPBF	IR	24+	SOT-223	35200	一級(jí)代理/放心采購(gòu)	詢(xún)價(jià)
深圳市弘為電子有限公司	IRLML6402TR	IR	24+	SOT-23	9544	原裝現(xiàn)貨假一罰十	詢(xún)價(jià)
深圳市鴻昌盛電子科技有限公司	IRL3713STRLPBF	INFINEON	25+	SOT263	500	原裝正品優(yōu)勢(shì)渠道	詢(xún)價(jià)
深圳市歐亞佳電子有限公司	IRLL2705TRPBF	IR	20+	SOT-223	11520	特價(jià)全新原裝公司現(xiàn)貨	詢(xún)價(jià)
深圳市福田區(qū)綠盛電子商行	IRLR8721TRPBF	IR	2018+		26976	代理原裝現(xiàn)貨/特價(jià)熱賣(mài)!	詢(xún)價(jià)

更多IRL供應(yīng)商更新時(shí)間2026-1-21 10:12:00

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