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首頁(yè) >IRL2203>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
IRL2203	文件：221.17 Kbytes Page：8 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：221.17 Kbytes 頁(yè)數(shù)：8 Pages	IRF	IRF
IRL2203	文件：300 bytes Page：1 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A⑦)	Infineon 英飛凌	Infineon
IRL2203N	文件：221.17 Kbytes Page：8 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：221.17 Kbytes 頁(yè)數(shù)：8 Pages	IRF	IRF
IRL2203NL	文件：132.36 Kbytes Page：10 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：132.36 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL2203NLPBF	文件：231.35 Kbytes Page：11 Pages	HEXFET? Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：231.35 Kbytes 頁(yè)數(shù)：11 Pages	IRF	IRF
IRL2203NLPBF	文件：295.79 Kbytes Page：10 Pages	Advanced Process Technology Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：295.79 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL2203NPBF	文件：183.07 Kbytes Page：8 Pages	HEXFET? Power MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：183.07 Kbytes 頁(yè)數(shù)：8 Pages	IRF	IRF
IRL2203NS	文件：132.36 Kbytes Page：10 Pages	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?? Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：132.36 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF
IRL2203NSPBF	文件：231.35 Kbytes Page：11 Pages	HEXFET? Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：231.35 Kbytes 頁(yè)數(shù)：11 Pages	IRF	IRF
IRL2203NSPBF	文件：295.79 Kbytes Page：10 Pages	Advanced Process Technology Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件：295.79 Kbytes 頁(yè)數(shù)：10 Pages	IRF	IRF

技術(shù)參數(shù)

Package?：
TO-220
VDS?max：
30.0V
RDS (on)(@10V)?max：
7.0m?
RDS (on)?max：
7.0m?
RDS (on)(@4.5V)?max：
10.0m?
Polarity?：
N
ID (@ TC=100°C)?max：
71.0A
ID ?max：
71.0A
ID (@ TC=25°C)?max：
100.0A
Ptot?max：
130.0W
QG?：
40.0nC?
Mounting?：
THT
RthJC?max：
1.2K/W
Tj?max：
175.0°C
VGS?max：
16.0V
Qgd?：
22.0nC?

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市勤思達(dá)科技有限公司	IRL2203	IR	15+	TO-220	11560	全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)	詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	IRL2203	IR	05+	TO-220	5000	全新原裝絕對(duì)有貨	詢價(jià)
深圳市佳鑫美電子科技有限公司	IRL2203	IOR	25+	TO-252	2987	絕對(duì)全新原裝現(xiàn)貨供應(yīng)!	詢價(jià)
深圳市振宏微科技有限公司	IRL2203	IR	23+	NA	146	專(zhuān)做原裝正品,假一罰百!	詢價(jià)
深圳市河鋒鑫科技有限公司	IRL2203	IR	22+	TO-220	6000	十年配單,只做原裝	詢價(jià)
深圳市賽美科科技有限公司	IRL2203	IR		TO-220	68500	一級(jí)代理原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨	詢價(jià)
深圳市能元時(shí)代電子有限公司	IRL2203	IR	23+		20812	##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)	詢價(jià)
深圳市宏世佳電子科技有限公司	IRL2203	IR	2025+	TO-252	4835	全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷(xiāo)售	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRL2203	IR	23+	TO-220	8000	只做原裝現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRL2203	IR	23+	TO-220	7000		詢價(jià)

更多IRL2203供應(yīng)商更新時(shí)間2026-1-23 9:04:00

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