| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power MOSFET FEATURES ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Logic-Level Gate Drive ? RDS(on) Specified at VGS = 4 V and 5 V ? 175 °C Operating Temperature ? Fast Switching ? Ease of Paralleling ? Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from 文件：1.16179 Mbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 文件：244.02 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Advanced Power MOSFET BVDSS = 100 V RDS(on) = 0.12Ω ID = 14 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ● Lower RDS(ON) : 0.101Ω (Typ.) 文件：233.97 Kbytes 頁數(shù)：7 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 文件：244.02 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Advanced Power MOSFET BVDSS = 100 V RDS(on) = 0.12Ω ID = 14 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ● Lower RDS(ON) : 0.101Ω (Typ.) 文件：233.97 Kbytes 頁數(shù)：7 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
Power MOSFET FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 175 °C operating temperature ? Material categorization: for definitions of compliance please see www.vishay.com/doc 文件：313.33 Kbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 175 °C operating temperature ? Material categorization: for definitions of compliance please see www.vishay.com/doc 文件：313.33 Kbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 文件：258.43 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation 文件：1.01255 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 文件：258.43 Kbytes 頁數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技術(shù)參數(shù)
- OPN：
IRL1004PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
40 V
- RDS (on) @10V max：
6.5 m?
- RDS (on) @4.5V max：
9 m?
- ID @25°C max：
130 A
- QG typ @4.5V：
66.7 nC
- Polarity：
N
- VGS(th) min：
1 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TRANSISTORMO |
25+ |
SMD2 |
2100 |
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙ |
詢價 | ||
ir |
23+ |
9000 |
原裝真實現(xiàn)貨庫存,專業(yè)定貨,特價 |
詢價 | |||
IOR |
24+ |
SMD |
2500 |
新 |
詢價 | ||
IR |
23+ |
TO-220 |
2870 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 | ||
IR |
24+ |
SOT23-3 |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
ir |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
IR |
23+ |
TO220 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
IR |
17+ |
SOT-23 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
24+ |
SOT-23 |
9544 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
2016+ |
SOT-163 |
178000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 |
相關(guān)規(guī)格書
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
相關(guān)庫存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
