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          首頁 >IRL>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRL3803VPBF

          HEXFET Power MOSFET

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:207.29 Kbytes 頁數:8 Pages

          IRF

          IRL3803VS

          HEXFET Power MOSFET

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

          文件:221.76 Kbytes 頁數:10 Pages

          IRF

          IRL40SC228

          isc N-Channel MOSFET Transistor

          FEATURES · Drain Current -ID= 360A@ TC=25℃ · Drain Source Voltage -VDSS= 40V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.65mΩ(Max)@VGS= 10V DESCRIPTION · DC/DC and AC/DC Converters · DC/AC Inverters

          文件:338.98 Kbytes 頁數:3 Pages

          ISC

          無錫固電

          IRL40T209

          絲?。?a target="_blank" title="Marking" href="/rl40t209/marking.html">RL40T209;Package:PG-HSOF-8;MOSFET IR MOSFET - StrongIRFETa

          Benefits ? Improved Gate and Avalanche Ruggedness ? Fully Characterized Capacitance and Avalanche SOA ? Improved ID rating ? Pb-Free ; RoHS Compliant ; Halogen-Free Potential applications ? Brushed Motor drive applications ? BLDC Motor drive applications ? Battery powered circuits ? Hal

          文件:1.0723 Mbytes 頁數:11 Pages

          INFINEON

          英飛凌

          IRL510

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

          文件:1.87459 Mbytes 頁數:8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRL510

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

          文件:1.03278 Mbytes 頁數:9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRL510A

          Advanced Power MOSFET

          BVDSS = 100 V RDS(on) = 0.44? ID = 5.6 A FEATURES ? Logic-Level Gate Drive ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS = 100V ? Lower RDS(ON): 0.33

          文件:242.06 Kbytes 頁數:8 Pages

          FAIRCHILD

          仙童半導體

          IRL510L

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

          文件:1.03278 Mbytes 頁數:9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRL510PBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

          文件:1.87459 Mbytes 頁數:8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRL510S

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It prov

          文件:277.82 Kbytes 頁數:9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          技術參數

          • OPN:

            IRL1004PBF

          • Qualification:

            Non-Automotive

          • Package name:

            TO220

          • VDS max:

            40 V

          • RDS (on) @10V max:

            6.5 m?

          • RDS (on) @4.5V max:

            9 m?

          • ID @25°C max:

            130 A

          • QG typ @4.5V:

            66.7 nC

          • Polarity:

            N

          • VGS(th) min:

            1 V

          • Technology:

            IR MOSFET?

          供應商型號品牌批號封裝庫存備注價格
          ir
          23+
          9000
          原裝真實現貨庫存,專業(yè)定貨,特價
          詢價
          IR
          0
          2013
          1
          SOT-23
          詢價
          IR
          2018+
          26976
          代理原裝現貨/特價熱賣!
          詢價
          INFINEON
          23+
          SOT23
          3000
          原裝正品假一罰百!可開增票!
          詢價
          IOR
          24+
          SMD
          2500
          詢價
          三年內
          1983
          只做原裝正品
          詢價
          IR
          24+
          TO-252
          66800
          原廠授權一級代理,專注汽車、醫(yī)療、工業(yè)、新能源!
          詢價
          VISHAY/威世
          2026+
          SOT223
          28594
          原盤環(huán)保/2500
          詢價
          SLKOR/薩科微
          22+
          TO-252
          18000
          原裝正品
          詢價
          IR
          20+
          TO-252
          5600
          樣品可出,原裝現貨
          詢價
          更多IRL供應商 更新時間2025-8-28 16:26:00
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