Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：1.01255 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：258.43 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.14656 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.14817 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? Logic-level gate drive;

Vishay

威世

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：258.43 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Advanced Power MOSFET

FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS= 100V ? Lower RDS(ON): 0.046?(Typ.)

文件：244.45 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：289.69 Kbytes 頁數(shù)：8 Pages

IRF

N-Channel MOSFET Transistor

? DESCRITION ? It is intended for general purpose switching applications ? FEATURES ? Low drain-source on-resistance: RDS(on) ≤ 44m? (max) ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable oper

文件：338.49 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Isc N-Channel MOSFET Transistor

? FEATURES ? With To-262 package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

文件：300.11 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電