Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 150 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：1.18626 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 150 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：895.86 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)

VDSS = 200V RDS(on) = 0.40? ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all comme

文件：324.83 Kbytes 頁數(shù)：8 Pages

IRF

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 150 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：1.18626 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.4? ID = 9 A FEATURES ? Logic-Level Gate Drive ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS = 200V ? Lower RDS(ON): 0.335?

文件：224.31 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導體

Power MOSFET

VDS (V) 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes

文件：1.92247 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET? Power MOSFET

VDSS = 200V RDS(on) = 0.40? ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all comme

文件：1.33919 Mbytes 頁數(shù)：8 Pages

IRF

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)

VDSS = 200V RDS(on) = 0.40? ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable o

文件：352.22 Kbytes 頁數(shù)：8 Pages

IRF

Power MOSFET

FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dv/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 150 °C operating temperature ? Material categorization: for definitions of compliance please see www.vishay.com/doc

文件：265.88 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dv/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 150 °C operating temperature ? Material categorization: for definitions of compliance please see www.vishay.com/doc

文件：265.88 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司