| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It prov 文件：277.82 Kbytes 頁(yè)數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It prov 文件：277.82 Kbytes 頁(yè)數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa 文件：1.02845 Mbytes 頁(yè)數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 文件：264.26 Kbytes 頁(yè)數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Logic-Level Gate Drive ? RDS(on) Specified at VGS = 4 V and 5 V ? 175 °C Operating Temperature ? Fast Switching ? Ease of Paralleling ? Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from 文件：1.16179 Mbytes 頁(yè)數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 文件：264.26 Kbytes 頁(yè)數(shù)：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Advenced Power MOSFET BVDSS = 100 V RDS(on) = 0.22? ID = 9.2 A FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS = 100V ? Lower RDS(ON): 0.176? (Typ.) 文件：227.08 Kbytes 頁(yè)數(shù)：7 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS (on) specified at VGS = 4 V and 5 V ? 175°C operating temperature ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datasheet provides inform 文件：334.57 Kbytes 頁(yè)數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS (on) specified at VGS = 4 V and 5 V ? 175°C operating temperature ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datasheet provides inform 文件：334.57 Kbytes 頁(yè)數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa 文件：1.02845 Mbytes 頁(yè)數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技術(shù)參數(shù)
- OPN：
IRL1004PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
40 V
- RDS (on) @10V max：
6.5 m?
- RDS (on) @4.5V max：
9 m?
- ID @25°C max：
130 A
- QG typ @4.5V：
66.7 nC
- Polarity：
N
- VGS(th) min：
1 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
三年內(nèi) |
1983 |
只做原裝正品 |
詢(xún)價(jià) | ||||
IR |
24+ |
SOT23 |
20000 |
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅！！ |
詢(xún)價(jià) | ||
IR |
25+ |
SOT23 |
694 |
旗艦店 |
詢(xún)價(jià) | ||
IR |
0 |
2013 |
1 |
SOT-23 |
詢(xún)價(jià) | ||
INTERSIL |
23+ |
65480 |
詢(xún)價(jià) | ||||
IR |
23+ |
TO-220 |
2870 |
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)! |
詢(xún)價(jià) | ||
INFINEON |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢(xún)價(jià) | ||
INFINEON |
23+ |
SOT23 |
3000 |
原裝正品假一罰百!可開(kāi)增票! |
詢(xún)價(jià) | ||
IR |
26+ |
原廠原封裝 |
86720 |
全新原裝正品價(jià)格最實(shí)惠 假一賠百 |
詢(xún)價(jià) | ||
IRF |
兩年內(nèi) |
NA |
924 |
實(shí)單價(jià)格可談 |
詢(xún)價(jià) |
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