| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power MOSFET VDS (V) 200 RDS(on) (Ω) VGS = 5.0 V 0.80 Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivene 文件：2.03127 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET POWER MOSFET VDSS = 200V RDS(on) = 0.80? ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all comme 文件：1.3385 Mbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? Fast switching ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? 文件：1.48363 Mbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A) VDSS = 200V RDS(on) = 0.80? ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The SMD-220 is a surface-mount power package capable of a 文件：502 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Power MOSFET FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? Fast switching ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? 文件：1.48363 Mbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET VDSS = 200V RDS(on) = 0.80? ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The SMD-220 is a surface-mount power package capable of a 文件：1.39136 Mbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Power MOSFET FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? Fast switching ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? 文件：1.48363 Mbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES ? Surface-mount ? Available in tape and reel ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? Fast switching ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? 文件：1.48363 Mbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Load switch for battery application Description The IRL6283MTRPbF combines the latest HEXFET? N-Channel Power MOSFET Silicon technology with the advanced DirectFET? packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET? package is compatible with exi 文件：508.65 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Power MOSFET VDS (V) 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes 文件：1.92247 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技術(shù)參數(shù)
- OPN：
IRL1004PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
40 V
- RDS (on) @10V max：
6.5 m?
- RDS (on) @4.5V max：
9 m?
- ID @25°C max：
130 A
- QG typ @4.5V：
66.7 nC
- Polarity：
N
- VGS(th) min：
1 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
SOT23 |
694 |
旗艦店 |
詢價 | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | ||||
INFINEON |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
IR |
24+ |
SOT23 |
20000 |
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅?。?/div> |
詢價 | ||
IRF |
兩年內(nèi) |
NA |
924 |
實單價格可談 |
詢價 | ||
INTERSIL |
23+ |
65480 |
詢價 | ||||
ir |
23+ |
9000 |
原裝真實現(xiàn)貨庫存,專業(yè)定貨,特價 |
詢價 | |||
I |
23+ |
D-PAK |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
INFINEON |
25+ |
SOT263 |
500 |
原裝正品優(yōu)勢渠道 |
詢價 | ||
IR |
26+ |
原廠原封裝 |
86720 |
全新原裝正品價格最實惠 假一賠百 |
詢價 |
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