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                >IRFD123>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    IRFD123
    Power MOSFET
    
DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.


FEATURES

? Dynamic dV/dt Rating

? Repetitive Avalanche Rated

? For Automatic Insertion


    文件：1.73655 Mbytes 頁數(shù)：8 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    IRFD123
    Power MOSFET
    
FEATURES
? Dynamic dV/dt rating
? Repetitive avalanche rated
? For automatic insertion
? End stackable
? 175 °C operating temperature
? Fast switching
? Ease of paralleling
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION
Third g
    文件：934.95 Kbytes 頁數(shù)：9 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    IRFD123
    1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs
    
Description
These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regul
    文件：360.08 Kbytes 頁數(shù)：6 Pages
    HARRIS
    

    IRFD123
    Power MOSFET
     ? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? For automatic insertion;
    Vishay
    威世
    

    IRFD123_V01
    Power MOSFET
    
FEATURES
? Dynamic dV/dt rating
? Repetitive avalanche rated
? For automatic insertion
? End stackable
? 175 °C operating temperature
? Fast switching
? Ease of paralleling
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION
Third g
    文件：934.95 Kbytes 頁數(shù)：9 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    IRFD123PBF
    Power MOSFET
    
DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.


FEATURES

? Dynamic dV/dt Rating

? Repetitive Avalanche Rated

? For Automatic Insertion


    文件：1.73655 Mbytes 頁數(shù)：8 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    IRFD123PBF
    Power MOSFET
    文件：934.95 Kbytes 頁數(shù)：9 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    
            
    
		
        
    
            
    
                
    詳細(xì)參數(shù)
    
            
    
            
      
            	
    • 型號：
      IRFD123
    • 功能描述：
      MOSFET N-Chan 100V 1.3 Amp 
    • RoHS：
      否 
    • 制造商：
      STMicroelectronics 
    • 晶體管極性：
      N-Channel 
    • 汲極/源極擊穿電壓：
      650 V 
    • 閘/源擊穿電壓：
      25 V 
    • 漏極連續(xù)電流：
      130 A 電阻汲極/源極 
    • RDS（導(dǎo)通）：
      0.014 Ohms 
    • 配置：
      Single 
    • 安裝風(fēng)格：
      Through Hole 
    • 封裝/箱體：
      Max247 
    • 封裝：
      Tube 
    
            
    
        
    
            
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    更多IRFD123供應(yīng)商
            更新時間2026-1-22 9:31:00
        
    
        
    
          
    
            
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