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          首頁(yè) >IRF730>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRF7303

          Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:111.24 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          IRF7303

          Generation V Technology

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:113.76 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          IRF7303

          Dual N-Channel MOSFET

          Features Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON)

          文件:396.57 Kbytes 頁(yè)數(shù):8 Pages

          EVVOSEMI

          翊歐

          IRF7303PBF

          HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050廓 )

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:230.54 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          IRF7303TR

          Generation V Technology

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:113.76 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          IRF7303TR

          絲?。?a target="_blank" title="Marking" href="/irf7303/marking.html">IRF7303;Package:SOP-8;Dual N-Channel MOSFET

          Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON) 50m (VGS = -10V) RDS(ON) 80m (VGS = -4.5V) Features The SOP-8 has been modied through a customizec leadframe for enhanced thermal characteristic

          文件:446.3 Kbytes 頁(yè)數(shù):8 Pages

          UMW

          友臺(tái)半導(dǎo)體

          IRF7303TR

          絲印:IRF7303;Package:SOP-8;Dual N-Channel MOSFET

          Features Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON)

          文件:396.57 Kbytes 頁(yè)數(shù):8 Pages

          EVVOSEMI

          翊歐

          IRF7303TRPBF

          Dual N-Channel 30-V (D-S) MOSFET

          FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 UIS Tested ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Set Top Box ? Low Current DC/DC

          文件:1.16241 Mbytes 頁(yè)數(shù):9 Pages

          VBSEMI

          微碧半導(dǎo)體

          IRF7303TRPBF-TP

          絲?。?a target="_blank" title="Marking" href="/f7303/marking.html">F7303;Package:SOP-8;Dual N-Channel Enhancement Mode Power MOSFET

          GENERAL FEATURES @ Ros(oN =35 mO@VGS=10V ? Ros =45 mO@VGS=4.5V ‘@ Super high density cell design for extremely low Ros(oN) ? Exceptional on-resistance and maximum DC curent capability

          文件:2.19004 Mbytes 頁(yè)數(shù):5 Pages

          TECHPUBLIC

          臺(tái)舟電子

          IRF7304

          絲?。?a target="_blank" title="Marking" href="/irf7304/marking.html">IRF7304;Package:SOP-8;Dual P-Channel MOSFET

          Generation V Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Features  VDS (V) = -20V  RDS(ON) 140 m (VGS =-2.7V)  RDS(ON) 90m (VGS =-4.5V) The SOP-8 has been modified through a customized leadframe for enhan

          文件:427.86 Kbytes 頁(yè)數(shù):8 Pages

          UMW

          友臺(tái)半導(dǎo)體

          技術(shù)參數(shù)

          • PC:

            74

          • ID:

            5.5

          • VDSS:

            400

          • Vth(min):

            2

          • RDS:

            1.0

          • VGS(RDS):

            10

          • Package:

            TO-220

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          IR
          13+
          TO-220/SOP8
          50000
          勤思達(dá)科技主營(yíng)IR系列,全新原裝正品,公司現(xiàn)貨供應(yīng)。
          詢價(jià)
          IR
          TO-220
          3200
          專業(yè)分銷全系列產(chǎn)品!絕對(duì)原裝正品!量大可訂!價(jià)格優(yōu)
          詢價(jià)
          SAMSUNG/三星
          25+
          TO220
          32360
          SAMSUNG/三星全新特價(jià)IRF730即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
          詢價(jià)
          APEC
          全新原裝
          TO-220(P)
          5000
          全新原裝 貨期兩周
          詢價(jià)
          IR
          24+
          TO-220
          2000
          全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
          詢價(jià)
          IR
          24+
          TO-220
          9600
          原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
          詢價(jià)
          IR
          15+
          TO-220
          14
          原裝正品 可含稅交易
          詢價(jià)
          FSC/仙童
          24+
          TO-220
          9200
          絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購(gòu)!
          詢價(jià)
          IR 墨西哥
          13+
          TO-220
          97
          只做原裝正品
          詢價(jià)
          IR
          24+
          TO 220
          161266
          明嘉萊只做原裝正品現(xiàn)貨
          詢價(jià)
          更多IRF730供應(yīng)商 更新時(shí)間2026-1-19 11:04:00
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