MOSFET/場效應(yīng)管

BlueRocket

藍(lán)箭電子

400V N-Channel MOSFET

ONSEMI

安森美半導(dǎo)體

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

文件：156.83 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：113.75 Kbytes 頁數(shù)：9 Pages

IRF

MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements,multiple devices can be used in an application with dramatically reduced board spa

文件：409.28 Kbytes 頁數(shù)：7 Pages

EVVOSEMI

翊歐

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：237.6 Kbytes 頁數(shù)：9 Pages

IRF

絲印：IRF7301；Package：SOP-8；MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements,multiple devices can be used in an application with dramatically reduced board spa

文件：409.28 Kbytes 頁數(shù)：7 Pages

EVVOSEMI

翊歐

絲?。?a target="_blank" title="Marking" href="/irf7301/marking.html">IRF7301；Package：SOP-8；Generation V Technology

Features VDS (V) = 20V RDS(ON)

文件：461.64 Kbytes 頁數(shù)：7 Pages

UMW

友臺半導(dǎo)體

Dual N-Channel 20-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC

文件：1.08868 Mbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/irf7303/marking.html">IRF7303；Package：SOP-8；Dual N-Channel MOSFET

Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON) 50m (VGS = -10V) RDS(ON) 80m (VGS = -4.5V) Features The SOP-8 has been modied through a customizec leadframe for enhanced thermal characteristic

文件：446.3 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導(dǎo)體