N-channel mosfet transistor

Features ? With TO-220 package ? Simple drive requirements ? Fast switching ? VDSS=400V; RDS(ON)≤1.0Ω ;ID=5.5A ? 1.gate 2.drain 3.source

文件：128.44 Kbytes 頁數(shù)：1 Pages

ISC

無錫固電

N-Channel Power MOSFETs, 5.5 A, 350 V/400 V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VQS Rated at ±20 V ? Silicon Gate for Fast Switching Sp

文件：848.7 Kbytes 頁數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

POWER MOSFET

GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay drivers. FEATURES ◆ Higher Current Rating ◆ Lower rDS(ON), Lower Capacitances ◆ Lower Total Gate Charge ◆ Tighter VSD Sp

文件：79.4 Kbytes 頁數(shù)：3 Pages

SUNTAC

N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET

Description The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. General features

文件：94.17 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

6.0A, 400V, 1.0廓 N-CHANNEL POWER MOSFET

DESCRIPTION ? IRF730 is 400V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ? Advanced termination scheme to provide enhanced voltage-blocking capability; ? Avalanche Energy Specified; ? Source-to-Drain Diode Recov

文件：365.66 Kbytes 頁數(shù)：6 Pages

FS

N-Channel Power MOSFET

DESCRIPTION The Nell IRF730 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. FEATURES ● RDS(ON) = 1.00? @ VGS = 10V ● Ultra low gate c

文件：341.04 Kbytes 頁數(shù)：7 Pages

NELLSEMI

尼爾半導(dǎo)體

Power MOSFET

文件：277.08 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

SEMICONDUCTORS

文件：2.43533 Mbytes 頁數(shù)：31 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

High Power Factor/Low THD

文件：355.59 Kbytes 頁數(shù)：16 Pages

IRF

Power MOSFET

? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? Fast switching;

Vishay

威世