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          首頁(yè) >IRF730>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRF730ASPBF

          Power MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss Specified ? Lead (Pb)-free Available APPLICATIONS ? Switch Mode Powe

          文件:166.34 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF730ASPBF

          HEXFET Power MOSFET (SMPS MOSFET)

          Applications ? Switch Mode Power Supply (SMPS) ? Uninterruptable Power Supply ? High speed power switching ? Lead-Free Benefits ? Low Gate Charge Qg results in Simple Drive Requirement ? Improved Gate, Avalanche and dynamic dv/dt Ruggedness ? Fully Characterized Capacitance and Avalanche V

          文件:296.62 Kbytes 頁(yè)數(shù):10 Pages

          IRF

          IRF730ASSLASHLPBF

          HEXFET Power MOSFET (SMPS MOSFET)

          Applications ? Switch Mode Power Supply (SMPS) ? Uninterruptable Power Supply ? High speed power switching ? Lead-Free Benefits ? Low Gate Charge Qg results in Simple Drive Requirement ? Improved Gate, Avalanche and dynamic dv/dt Ruggedness ? Fully Characterized Capacitance and Avalanche V

          文件:296.62 Kbytes 頁(yè)數(shù):10 Pages

          IRF

          IRF730ASTRL

          Power MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss Specified ? Lead (Pb)-free Available APPLICATIONS ? Switch Mode Powe

          文件:166.34 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF730ASTRLPBF

          Power MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss Specified ? Lead (Pb)-free Available APPLICATIONS ? Switch Mode Powe

          文件:166.34 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF730ASTRRPBF

          Power MOSFET

          FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Effective Coss Specified ? Lead (Pb)-free Available APPLICATIONS ? Switch Mode Powe

          文件:166.34 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF730B

          Low Area Specific On-Resistance

          FEATURES ? Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) ? Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry

          文件:293.32 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF730B

          D Series Power MOSFET

          FEATURES ? Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) ? Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (

          文件:173.28 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF730B

          400V N-Channel MOSFET

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

          文件:898.57 Kbytes 頁(yè)數(shù):10 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF730B

          400V N-Channel MOSFET

          General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

          文件:3.10167 Mbytes 頁(yè)數(shù):9 Pages

          KERSEMI

          技術(shù)參數(shù)

          • PC:

            74

          • ID:

            5.5

          • VDSS:

            400

          • Vth(min):

            2

          • RDS:

            1.0

          • VGS(RDS):

            10

          • Package:

            TO-220

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          IR
          13+
          TO-220/SOP8
          50000
          勤思達(dá)科技主營(yíng)IR系列,全新原裝正品,公司現(xiàn)貨供應(yīng)。
          詢價(jià)
          IR
          TO-220
          3200
          專業(yè)分銷(xiāo)全系列產(chǎn)品!絕對(duì)原裝正品!量大可訂!價(jià)格優(yōu)
          詢價(jià)
          SAMSUNG/三星
          25+
          TO220
          32360
          SAMSUNG/三星全新特價(jià)IRF730即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
          詢價(jià)
          APEC
          全新原裝
          TO-220(P)
          5000
          全新原裝 貨期兩周
          詢價(jià)
          IR
          24+
          TO-220
          2000
          全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
          詢價(jià)
          IR
          24+
          TO-220
          9600
          原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
          詢價(jià)
          IR
          15+
          TO-220
          14
          原裝正品 可含稅交易
          詢價(jià)
          FSC/仙童
          24+
          TO-220
          9200
          絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購(gòu)!
          詢價(jià)
          IR 墨西哥
          13+
          TO-220
          97
          只做原裝正品
          詢價(jià)
          IR
          24+
          TO 220
          161266
          明嘉萊只做原裝正品現(xiàn)貨
          詢價(jià)
          更多IRF730供應(yīng)商 更新時(shí)間2026-1-20 11:03:00
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