| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Generation V Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：243.89 Kbytes 頁數(shù)：6 Pages | IRF | IRF | ||
Dual P-Channel MOSFET Features Generation V Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = -20V RDS(ON) 文件：394.76 Kbytes 頁數(shù)：8 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
HEXFET Power MOSFET
文件：231.56 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description These HEXFET? Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetit 文件：252.54 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Dual P-Channel 30-V (D-S) MOSFET FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? 100 UIS Tested APPLICATIONS ? Load Switches 文件：1.19559 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
絲?。?a target="_blank" title="Marking" href="/irf7304/marking.html">IRF7304；Package：SOP-8；Dual P-Channel MOSFET Generation V Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Features VDS (V) = -20V RDS(ON) 140 m (VGS =-2.7V) RDS(ON) 90m (VGS =-4.5V) The SOP-8 has been modified through a customized leadframe for enhan 文件：427.86 Kbytes 頁數(shù)：8 Pages | UMW 友臺半導(dǎo)體 | UMW | ||
Generation V Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：115.39 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
絲印：IRF7304；Package：SOP-8；Dual P-Channel MOSFET Features Generation V Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = -20V RDS(ON) 文件：394.76 Kbytes 頁數(shù)：8 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：113.68 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
HEXFET?Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：231.71 Kbytes 頁數(shù)：9 Pages | IRF | IRF |
技術(shù)參數(shù)
- PC：
74
- ID：
5.5
- VDSS：
400
- Vth(min)：
2
- RDS：
1.0
- VGS(RDS)：
10
- Package：
TO-220
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
13+ |
TO-220/SOP8 |
50000 |
勤思達(dá)科技主營IR系列,全新原裝正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
IR |
TO-220 |
3200 |
專業(yè)分銷全系列產(chǎn)品!絕對原裝正品!量大可訂!價(jià)格優(yōu) |
詢價(jià) | |||
SAMSUNG/三星 |
25+ |
TO220 |
32360 |
SAMSUNG/三星全新特價(jià)IRF730即刻詢購立享優(yōu)惠#長期有貨 |
詢價(jià) | ||
APEC |
全新原裝 |
TO-220(P) |
5000 |
全新原裝 貨期兩周 |
詢價(jià) | ||
IR |
24+ |
TO-220 |
2000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價(jià) | ||
IR |
24+ |
TO-220 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單! |
詢價(jià) | ||
IR |
15+ |
TO-220 |
14 |
原裝正品 可含稅交易 |
詢價(jià) | ||
FSC/仙童 |
24+ |
TO-220 |
9200 |
絕對原裝現(xiàn)貨,價(jià)格低,歡迎詢購! |
詢價(jià) | ||
IR 墨西哥 |
13+ |
TO-220 |
97 |
只做原裝正品 |
詢價(jià) | ||
IR |
24+ |
TO 220 |
161266 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) |
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