Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：113.76 Kbytes 頁(yè)數(shù)：9 Pages

IRF

絲?。?a target="_blank" title="Marking" href="/irf7303/marking.html">IRF7303；Package：SOP-8；Dual N-Channel MOSFET

Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON) 50m (VGS = -10V) RDS(ON) 80m (VGS = -4.5V) Features The SOP-8 has been modied through a customizec leadframe for enhanced thermal characteristic

文件：446.3 Kbytes 頁(yè)數(shù)：8 Pages

UMW

友臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/irf7303/marking.html">IRF7303；Package：SOP-8；Dual N-Channel MOSFET

Features Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON)

文件：396.57 Kbytes 頁(yè)數(shù)：8 Pages

EVVOSEMI

翊歐

Dual N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 UIS Tested ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Set Top Box ? Low Current DC/DC

文件：1.16241 Mbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/f7303/marking.html">F7303；Package：SOP-8；Dual N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES @ Ros(oN =35 mO@VGS=10V ? Ros =45 mO@VGS=4.5V ‘@ Super high density cell design for extremely low Ros(oN) ? Exceptional on-resistance and maximum DC curent capability

文件：2.19004 Mbytes 頁(yè)數(shù)：5 Pages

TECHPUBLIC

臺(tái)舟電子