絲?。?strong>IRF7303；Package：SOP-8；Dual N-Channel MOSFET

Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON) 50m (VGS = -10V) RDS(ON) 80m (VGS = -4.5V) Features The SOP-8 has been modied through a customizec leadframe for enhanced thermal characteristic

文件：446.3 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導(dǎo)體

Dual N-Channel MOSFET

Features Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON)

文件：396.57 Kbytes 頁數(shù)：8 Pages

EVVOSEMI

翊歐

Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：111.24 Kbytes 頁數(shù)：9 Pages

IRF

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：113.76 Kbytes 頁數(shù)：9 Pages

IRF

Generation V Technology

文件：780.11 Kbytes 頁數(shù)：9 Pages

KERSEMI

絲?。?strong>IRF7303；Package：SOP-8；Dual N-Channel MOSFET

Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON) 50m (VGS = -10V) RDS(ON) 80m (VGS = -4.5V) Features The SOP-8 has been modied through a customizec leadframe for enhanced thermal characteristic

文件：446.3 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導(dǎo)體

絲印：IRF7303；Package：SOP-8；Dual N-Channel MOSFET

Features Generation VTechnology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = 30V ID = 5.3 A RDS(ON)

文件：396.57 Kbytes 頁數(shù)：8 Pages

EVVOSEMI

翊歐

采用 SO-8 封裝的 IR MOSFET 30 V

\n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 雙 N 通道 MOSFET;

Infineon

英飛凌

HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050廓 )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：230.54 Kbytes 頁數(shù)：9 Pages

IRF

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：113.76 Kbytes 頁數(shù)：9 Pages

IRF